PMBD353,215 NXP Semiconductors, PMBD353,215 Datasheet - Page 2
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PMBD353,215
Manufacturer Part Number
PMBD353,215
Description
DIODE SCHOTTKY 4V 30MA SOT23
Manufacturer
NXP Semiconductors
Series
-r
Datasheet
1.PMBD353235.pdf
(7 pages)
Specifications of PMBD353,215
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Diode Type
Schottky - 1 Pair Series Connection
Voltage - Peak Reverse (max)
4V
Current - Max
30mA
Capacitance @ Vr, F
1pF @ 0V, 1MHz
Product
Schottky Diodes
Peak Reverse Voltage
4 V
Forward Continuous Current
0.03 A
Configuration
Dual Series
Forward Voltage Drop
0.6 V @ 0.01 A
Maximum Reverse Leakage Current
0.25 uA
Operating Temperature Range
+ 100 C
Mounting Style
SMD/SMT
Resistance @ If, F
-
Power Dissipation (max)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power Dissipation (max)
-
Resistance @ If, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
933912210215
PMBD353 T/R
PMBD353 T/R
PMBD353 T/R
PMBD353 T/R
NXP Semiconductors
FEATURES
• Low forward voltage
• Small SMD package
• Low capacitance.
APPLICATIONS
• UHF mixer
• Sampling circuits
• Modulators
• Phase detection.
DESCRIPTION
Planar Schottky barrier double diode
in a SOT23 small plastic SMD
package.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
2001 Oct 15
Per diode
V
I
T
T
F
SYMBOL
stg
j
R
Schottky barrier double diode
continuous reverse voltage
continuous forward current
storage temperature
junction temperature
PARAMETER
MARKING
Note
1. ∗ = p: Made in Hong Kong.
TYPE NUMBER
∗ = t: Made in Malaysia.
∗ = W: Made in China.
PMBD353
Fig.1
handbook, 2 columns
Simplified outline (SOT23) pin configuration and symbol.
Top view
2
1
MARKING
CODE
∗4F
3
(1)
MGC421
2
−
−
−65
−
handbook, 2 columns
PINNING
MIN.
PIN
1
2
3
1
cathode k
anode a
common connection a
4
30
+150
100
MAX.
DESCRIPTION
3
Product data sheet
2
PMBD353
1
MGC487
V
mA
°C
°C
2
UNIT
1
, k
2