PMBD353,215 NXP Semiconductors, PMBD353,215 Datasheet - Page 3
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PMBD353,215
Manufacturer Part Number
PMBD353,215
Description
DIODE SCHOTTKY 4V 30MA SOT23
Manufacturer
NXP Semiconductors
Series
-r
Datasheet
1.PMBD353235.pdf
(7 pages)
Specifications of PMBD353,215
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Diode Type
Schottky - 1 Pair Series Connection
Voltage - Peak Reverse (max)
4V
Current - Max
30mA
Capacitance @ Vr, F
1pF @ 0V, 1MHz
Product
Schottky Diodes
Peak Reverse Voltage
4 V
Forward Continuous Current
0.03 A
Configuration
Dual Series
Forward Voltage Drop
0.6 V @ 0.01 A
Maximum Reverse Leakage Current
0.25 uA
Operating Temperature Range
+ 100 C
Mounting Style
SMD/SMT
Resistance @ If, F
-
Power Dissipation (max)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power Dissipation (max)
-
Resistance @ If, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
933912210215
PMBD353 T/R
PMBD353 T/R
PMBD353 T/R
PMBD353 T/R
NXP Semiconductors
ELECTRICAL CHARACTERISTICS
T
Note
1. Pulse test: t
THERMAL CHARACTERISTICS
Note
1. Refer to SOT23 standard mounting conditions.
2001 Oct 15
Per diode
V
I
C
R
SYMBOL
SYMBOL
amb
R
F
Schottky barrier double diode
d
th j-a
= 25 °C unless otherwise specified.
forward voltage
reverse current
diode capacitance
thermal resistance from junction to ambient
p
= 300 μs; δ = 0.02.
PARAMETER
PARAMETER
see Fig.2
V
f = 1 MHz; V
note 1
3
R
I
I
I
F
F
F
= 3 V; note 1; see Fig.3
= 0.1 mA
= 1 mA
= 10 mA
CONDITIONS
CONDITIONS
R
= 0; see Fig.4
350
450
600
0.25
1
VALUE
MAX.
Product data sheet
500
PMBD353
mV
mV
mV
μA
pF
UNIT
UNIT
K/W