PMBD353,215 NXP Semiconductors, PMBD353,215 Datasheet - Page 3

• Manufacturer Part Number: PMBD353,215
• Description: DIODE SCHOTTKY 4V 30MA SOT23
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PMBD353,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Diode Type: Schottky - 1 Pair Series Connection
• Voltage - Peak Reverse (max): 4V
• Current - Max: 30mA
• Capacitance @ Vr, F: 1pF @ 0V, 1MHz
• Product: Schottky Diodes
• Peak Reverse Voltage: 4 V
• Forward Continuous Current: 0.03 A
• Configuration: Dual Series
• Forward Voltage Drop: 0.6 V @ 0.01 A
• Maximum Reverse Leakage Current: 0.25 uA
• Operating Temperature Range: + 100 C
• Mounting Style: SMD/SMT
• Resistance @ If, F: -
• Power Dissipation (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power Dissipation (max): -
• Resistance @ If, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933912210215; PMBD353 T/R; PMBD353 T/R

NXP Semiconductors
ELECTRICAL CHARACTERISTICS
T
Note
1. Pulse test: t
THERMAL CHARACTERISTICS
Note
1. Refer to SOT23 standard mounting conditions.
2001 Oct 15
Per diode
V
I
C
R
SYMBOL
SYMBOL
amb
R
F
Schottky barrier double diode
d
th j-a
= 25 °C unless otherwise specified.
forward voltage
reverse current
diode capacitance
thermal resistance from junction to ambient
p
= 300 μs; δ = 0.02.
PARAMETER
PARAMETER
see Fig.2
V
f = 1 MHz; V
note 1
3
R
I
I
I
F
F
F
= 3 V; note 1; see Fig.3
= 0.1 mA
= 1 mA
= 10 mA
CONDITIONS
CONDITIONS
R
= 0; see Fig.4
350
450
600
0.25
1
VALUE
MAX.
Product data sheet
500
PMBD353
mV
mV
mV
μA
pF
UNIT
UNIT
K/W