1PS79SB17,115 NXP Semiconductors, 1PS79SB17,115 Datasheet - Page 4
![DIODE SCHOTTKY 4V 30MA SC79](/photos/5/25/52584/568-sod-523_1-1g1a_sc-79_sod523_sml.jpg)
1PS79SB17,115
Manufacturer Part Number
1PS79SB17,115
Description
DIODE SCHOTTKY 4V 30MA SC79
Manufacturer
NXP Semiconductors
Datasheet
1.1PS66SB17115.pdf
(8 pages)
Specifications of 1PS79SB17,115
Package / Case
SC-79, SOD-523
Current - Max
30mA
Voltage - Peak Reverse (max)
4V
Capacitance @ Vr, F
0.65pF @ 0.5V, 1MHz
Product
Schottky Diodes
Peak Reverse Voltage
4 V
Forward Continuous Current
0.03 A
Configuration
Single
Forward Voltage Drop
0.6 V @ 0.01 A
Maximum Reverse Leakage Current
0.25 uA
Operating Temperature Range
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power Dissipation (max)
-
Resistance @ If, F
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
1PS79SB17 T/R::1PS79SB17 T/R::934058074115
Philips Semiconductors
9397 750 14587
Product data sheet
Fig 1. Forward current as a function of forward
Fig 3. Diode capacitance as a function of reverse voltage; typical values.
(mA)
(1) T
(2) T
(3) T
(4) T
I
10
10
F
10
10
1
2
1
2
voltage; typical values.
T
0
amb
amb
amb
amb
amb
= 150 C
= 85 C
= 25 C
= 40 C
= 25 C; f = 1 MHz
0.2
(1)
(2)
0.4
(3)
(4)
(pF)
C
0.8
0.7
0.6
0.5
0.4
d
0.6
0
006aaa077
V
F
(V)
0.8
1
Rev. 06 — 4 April 2005
2
Fig 2. Reverse current as a function of reverse
(nA)
I
R
(1) T
(2) T
(3) T
(4) T
10
10
10
10
10
10
10
10
1
5
4
3
2
1
2
3
3
voltage; typical values.
0
amb
amb
amb
amb
V
R
4 V, 30 mA low C
= 150 C
= 85 C
= 25 C
= 40 C
mlc797
(V)
4
1
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
2
(1)
(2)
(3)
(4)
d
Schottky barrier diode
1PSxSB17
3
V
006aaa078
R
(V)
4
4 of 8