BCV27T/R NXP Semiconductors, BCV27T/R Datasheet - Page 2

• Manufacturer Part Number: BCV27T/R
• Description: Trans Darlington NPN 30V 0.5A 3-Pin TO-236AB T/R
• Manufacturer: NXP Semiconductors
• Type: NPNr

Specifications of BCV27T/R

• Package: 3TO-236AB
• Configuration: Single
• Peak Dc Collector Current: 0.5 A
• Maximum Base Emitter Saturation Voltage: 1.5@0.1mA@100mA V
• Maximum Collector Emitter Saturation Voltage: 1@0.1mA@100mA V
• Maximum Collector Base Voltage: 40 V
• Maximum Collector Cut-off Current: 0.1 uA
• Maximum Collector Emitter Voltage: 30 V
• Minimum Dc Current Gain: 4000@1mA@5V|10000@10mA@5V|20000@100mA@5V

NXP Semiconductors
FEATURES
• Medium current (max. 500 mA)
• Low voltage (max. 60 V)
• High DC current gain (min. 20 000).
APPLICATIONS
• Preamplifier input applications.
DESCRIPTION
NPN Darlington transistor in a SOT23 plastic package.
PNP complements: BCV26 and BCV46.
MARKING
Note
1. * = p : Made in Hong Kong.
ORDERING INFORMATION
2004 Jan 13
BCV27
BCV47
BCV27
BCV47
NUMBER
NPN Darlington transistors
* = t : Made in Malaysia.
* = W : Made in China.
TYPE
TYPE NUMBER
NAME
−
plastic surface mounted package; 3 leads
MARKING CODE
FG*
FF*
(1)
DESCRIPTION
2
PACKAGE
PINNING
handbook, halfpage
PIN
Top view
1
2
3
Fig.1 Simplified outline (SOT23) and symbol.
1
base
emitter
collector
3
2
DESCRIPTION
BCV27; BCV47
Product data sheet
1
TR1
VERSION
MAM298
TR2
SOT23
3
2