BCV27T/R NXP Semiconductors, BCV27T/R Datasheet - Page 3

• Manufacturer Part Number: BCV27T/R
• Description: Trans Darlington NPN 30V 0.5A 3-Pin TO-236AB T/R
• Manufacturer: NXP Semiconductors
• Type: NPNr

Specifications of BCV27T/R

• Package: 3TO-236AB
• Configuration: Single
• Peak Dc Collector Current: 0.5 A
• Maximum Base Emitter Saturation Voltage: 1.5@0.1mA@100mA V
• Maximum Collector Emitter Saturation Voltage: 1@0.1mA@100mA V
• Maximum Collector Base Voltage: 40 V
• Maximum Collector Cut-off Current: 0.1 uA
• Maximum Collector Emitter Voltage: 30 V
• Minimum Dc Current Gain: 4000@1mA@5V|10000@10mA@5V|20000@100mA@5V

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004 Jan 13
V
V
V
I
I
I
P
T
T
T
R
C
CM
B
SYMBOL
SYMBOL
stg
j
amb
CBO
CES
EBO
tot
NPN Darlington transistors
th(j-a)
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
thermal resistance from junction to ambient
BCV27
BCV47
BCV27
BCV47
PARAMETER
PARAMETER
open emitter
open base
open collector
T
3
amb
≤ 25 °C; note 1
CONDITIONS
note 1
CONDITIONS
−
−
−
−
−
−
−
−
−
−65
−
−65
MIN.
BCV27; BCV47
VALUE
500
Product data sheet
40
80
30
60
10
500
800
100
250
+150
150
+150
MAX.
UNIT
K/W
V
V
V
V
V
mA
mA
mA
mW
°C
°C
°C
UNIT