BC850CT/R NXP Semiconductors, BC850CT/R Datasheet - Page 5
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BC850CT/R
Manufacturer Part Number
BC850CT/R
Description
Trans GP BJT NPN 45V 0.1A 3-Pin TO-236AB T/R
Manufacturer
NXP Semiconductors
Type
NPNr
Datasheet
1.BC850C235.pdf
(8 pages)
Specifications of BC850CT/R
Package
3TO-236AB
Supplier Package
TO-236AB
Pin Count
3
Minimum Dc Current Gain
420@2mA@5V
Maximum Operating Frequency
100(Min) MHz
Maximum Dc Collector Current
0.1 A
Maximum Base Emitter Saturation Voltage
0.7(Typ)@0.5mA@10mA|0.9(Typ)@5mA@100mA V
Maximum Collector Emitter Saturation Voltage
0.25@0.5mA@10mA|0.6@5mA@100mA V
Maximum Collector Base Voltage
50 V
Maximum Collector Emitter Voltage
45 V
Maximum Emitter Base Voltage
5 V
NXP Semiconductors
2004 Jan 16
handbook, full pagewidth
handbook, full pagewidth
NPN general purpose transistors
BC849B; BC850B.
BC849C; BC850C.
h FE
h FE
300
200
100
600
400
200
0
0
10
10
−2
−2
10
10
−1
−1
Fig.2 DC current gain; typical values.
Fig.3 DC current gain; typical values.
1
1
5
10
10
V CE = 5 V
V CE = 5 V
10
10
2
2
BC849; BC850
I C (mA)
I C (mA)
Product data sheet
MBH724
MBH725
10
10
3
3