BC850CT/R NXP Semiconductors, BC850CT/R Datasheet - Page 8
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BC850CT/R
Manufacturer Part Number
BC850CT/R
Description
Trans GP BJT NPN 45V 0.1A 3-Pin TO-236AB T/R
Manufacturer
NXP Semiconductors
Type
NPNr
Datasheet
1.BC850C235.pdf
(8 pages)
Specifications of BC850CT/R
Package
3TO-236AB
Supplier Package
TO-236AB
Pin Count
3
Minimum Dc Current Gain
420@2mA@5V
Maximum Operating Frequency
100(Min) MHz
Maximum Dc Collector Current
0.1 A
Maximum Base Emitter Saturation Voltage
0.7(Typ)@0.5mA@10mA|0.9(Typ)@5mA@100mA V
Maximum Collector Emitter Saturation Voltage
0.25@0.5mA@10mA|0.6@5mA@100mA V
Maximum Collector Base Voltage
50 V
Maximum Collector Emitter Voltage
45 V
Maximum Emitter Base Voltage
5 V
Printed in The Netherlands
© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: salesaddresses@nxp.com
R75/06/pp8
Date of release: 2004 Jan 16
Document order number: 9397 750 12396