BFR520T/R NXP Semiconductors, BFR520T/R Datasheet - Page 4

• Manufacturer Part Number: BFR520T/R
• Description: Trans GP BJT NPN 15V 0.07A 3-Pin TO-236AB T/R
• Manufacturer: NXP Semiconductors
• Type: NPNr

Specifications of BFR520T/R

• Package: 3TO-236AB
• Supplier Package: TO-236AB
• Pin Count: 3
• Minimum Dc Current Gain: 60@20mA@6V
• Maximum Operating Frequency: 9000(Typ) MHz
• Maximum Dc Collector Current: 0.07 A
• Maximum Collector Base Voltage: 20 V
• Maximum Collector Emitter Voltage: 15 V
• Maximum Emitter Base Voltage: 2.5 V

Philips Semiconductors
9397 750 13397
Product data sheet
Fig 1. Power derating curve.
(mW)
P
tot
400
300
200
100
0
0
50
Table 7:
T
[1]
[2]
Symbol Parameter
NF
P
ITO
j
L(1dB)
= 25 C unless otherwise specified.
G
I
Measured at f
100
C
UM
= 20 mA; V
is the maximum unilateral power gain, assuming s
G
noise figure
output power at
1 dB gain
compression
third order
intercept point
UM
Characteristics
150
=
CE
(2p q)
T
10
sp
= 6 V; R
mra702
( C)
= 898 MHz and f
log
Rev. 03 — 1 September 2004
200
----------------------------------------------------- dB.
L
1
= 50 ; T
Conditions
T
I
R
f = 900 MHz
C
…continued
–
s
amb
L
I
I
I
= 20 mA; V
=
C
C
C
= 50 ; T
s
= 5 mA; f = 900 MHz
= 20 mA; f = 900 MHz
= 5 mA; f = 2 GHz
11
= 25 C
opt
s
2
amb
(2q p)
; V
21
Fig 2. DC current gain as a function of collector
1
2
CE
= 25 C; f
–
amb
= 904 MHz.
CE
= 6 V;
h
s
FE
22
250
200
150
100
= 25 C;
= 6 V;
50
0
V
current.
2
10
CE
p
= 900 MHz; f
2
= 6 V.
12
is zero and
10
1
[2]
q
NPN 9 GHz wideband transistor
= 902 MHz
Min
-
-
-
-
-
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
1
Typ
1.1
1.6
1.9
17
26
10
I
BFR520
C
(mA)
mra703
Max
1.6
2.1
-
-
-
10
2
4 of 13
Unit
dB
dB
dB
dBm
dBm