BFR520T/R NXP Semiconductors, BFR520T/R Datasheet - Page 5

• Manufacturer Part Number: BFR520T/R
• Description: Trans GP BJT NPN 15V 0.07A 3-Pin TO-236AB T/R
• Manufacturer: NXP Semiconductors
• Type: NPNr

Specifications of BFR520T/R

• Package: 3TO-236AB
• Supplier Package: TO-236AB
• Pin Count: 3
• Minimum Dc Current Gain: 60@20mA@6V
• Maximum Operating Frequency: 9000(Typ) MHz
• Maximum Dc Collector Current: 0.07 A
• Maximum Collector Base Voltage: 20 V
• Maximum Collector Emitter Voltage: 15 V
• Maximum Emitter Base Voltage: 2.5 V

Philips Semiconductors
9397 750 13397
Product data sheet
Fig 3. Feedback capacitance as a function of
Fig 5. Gain as a function of collector current;
gain
(dB)
(pF)
C
re
0.6
0.4
0.2
25
20
15
10
5
0
0
I
collector-base voltage.
V
f = 900 MHz.
C
0
0
CE
= 0 A; f = 1 MHz.
= 6 V; f = 900 MHz.
MSG
10
4
20
8
G
UM
V
I
C
CB
(mA)
(V)
G
mra704
mra706
max
Rev. 03 — 1 September 2004
12
30
Fig 4. Transition frequency as a function of collector
Fig 6. Gain as a function of collector current;
(GHz)
gain
(dB)
f
T
12
25
20
15
10
8
4
0
5
0
T
current.
V
f = 2 GHz.
10
0
amb
CE
1
= 6 V; f = 2 GHz.
= 25 C; f = 1 GHz.
10
1
NPN 9 GHz wideband transistor
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
G max
G UM
V
CE
10
20
= 6 V
3 V
I
C
I
C
BFR520
(mA)
(mA)
mra705
mra707
10
30
2
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