BA 892 E6433 Infineon Technologies, BA 892 E6433 Datasheet - Page 4
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BA 892 E6433
Manufacturer Part Number
BA 892 E6433
Description
DIODE RF SW 35V 100MA SCD-80
Manufacturer
Infineon Technologies
Datasheet
1.BA_892-02V_E6127.pdf
(11 pages)
Specifications of BA 892 E6433
Package / Case
SCD 80
Diode Type
Standard - Single
Voltage - Peak Reverse (max)
35V
Current - Max
100mA
Capacitance @ Vr, F
1.1pF @ 3V, 1MHz
Resistance @ If, F
500 mOhm @ 10mA, 100MHz
Configuration
Single
Reverse Voltage
35 V
Forward Continuous Current
100 mA
Carrier Life
0.12 us
Forward Voltage Drop
1 V
Maximum Diode Capacitance
1.1 pF at 3 V
Maximum Operating Temperature
+ 125 C
Maximum Series Resistance @ Maximum If
0.5 Ohms at 10 mA
Maximum Series Resistance @ Minimum If
0.7 Ohms at 3 mA
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power Dissipation (max)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
BA892E6433XT
SP000010158
SP000010158
Diode capacitance C
f = Parameter
Forward resistance r
f = 100MHz
Ohm
pF
10
1.2
0.8
0.4
10
10
10
2
0
-1
0
2
1
0
10
-2
5
10
-1
10
1 MHz ... 1 GHz
T
f
15
= (I
= (V
10
0
F
20
R
)
)
10
1
V
V
I
F
R
mA
30
10
2
4
Forward current I
T
Reverse parallel resistance R
f = Parameter
KOhm
A
= Parameter
10
10
10
10
10
10
10
10
10
10
10
10
A
-1
-1
-2
-3
-4
-5
-6
3
2
1
0
0
0
0
1 GHz
100 MHz
0.2
5
0.4
10
F
=
0.6
15
(V
BA592/BA892...
F
)
0.8
20
P
2007-04-19
= (V
-40 °C
25 °C
85 °C
125 °C
V
V
V
V
F
R
R
)
1.2
30