BLF147,112 NXP Semiconductors, BLF147,112 Datasheet
BLF147,112
Specifications of BLF147,112
933930000112
BLF147
BLF147
Related parts for BLF147,112
BLF147,112 Summary of contents
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... IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. ...
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... NXP Semiconductors VHF power MOS transistor FEATURES High power gain Low intermodulation distortion Easy power control Good thermal stability Withstands full load mismatch. APPLICATIONS Industrial and military applications in the HF/VHF frequency range. DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT121B flange package with a ceramic cap ...
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... NXP Semiconductors VHF power MOS transistor LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL PARAMETER V drain-source voltage DS V gate-source voltage GS I drain current (DC total power dissipation tot T storage temperature stg T junction temperature j THERMAL CHARACTERISTICS SYMBOL R thermal resistance from junction to mounting base ...
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... NXP Semiconductors VHF power MOS transistor CHARACTERISTICS unless otherwise specified. j SYMBOL PARAMETER V drain-source breakdown voltage (BR)DSS I drain-source leakage current DSS I gate-source leakage current GSS V gate-source threshold voltage GSth V gate-source voltage difference of GS matched pairs g forward transconductance fs R drain-source on-state resistance ...
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... NXP Semiconductors VHF power MOS transistor 0 handbook, halfpage T.C. (mV/ valid for Fig.4 Temperature coefficient of gate-source voltage as a function of drain current; typical values. 170 handbook, halfpage R DSon (m ) 150 130 110 Fig.6 Drain-source on-state resistance as a function of junction temperature; typical values. MGP050 handbook, halfpage ...
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... NXP Semiconductors VHF power MOS transistor 500 handbook, halfpage C rs (pF) 400 300 200 100 MHz. GS Fig.8 Feedback capacitance as a function of drain-source voltage; typical values. APPLICATION INFORMATION FOR CLASS-AB OPERATION RF performance in SSB operation in a common source class-AB circuit 0 (W) (MHz 150 (PEP) ...
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... NXP Semiconductors VHF power MOS transistor 30 handbook, halfpage G p (dB 100 Class-AB operation 9 28.000 MHz 28.001 MHz Fig.9 Power gain as a function of load power; typical values. 20 handbook, halfpage d 3 (dB 100 Class-AB operation 9 28.000 MHz 28.001 MHz Fig.11 Third order intermodulation distortion as a function of load power; typical values. ...
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... NXP Semiconductors VHF power MOS transistor handbook, full pagewidth input MHz. L3 D.U. Fig.13 Test circuit for class-AB operation. Rev December 2006 Product specification C8 C10 C12 C14 L7 output 50 C15 C9 C11 C13 MGP057 BLF147 ...
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... NXP Semiconductors VHF power MOS transistor List of components (see Fig 13). COMPONENT C1, C3, C13, C14 film dielectric trimmer C2, C8, C9 multilayer ceramic chip capacitor; note 1 C4, C5 multilayer ceramic chip capacitor C6 multilayer ceramic chip capacitors in parallel C7 electrolytic capacitor C10 multilayer ceramic chip capacitor; note 1 C11, C12 multilayer ceramic chip capacitor ...
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... NXP Semiconductors VHF power MOS transistor 30 handbook, halfpage G P (dB Class-AB operation 6. 150 W (PEP 2 Fig.14 Power gain as a function of frequency; typical values. 4 handbook, halfpage 100 Class-B operation 0 150 Fig.16 Input impedance as a function of frequency (series components); typical values. MGP058 handbook, halfpage ( ) (MHz) Class-AB operation ...
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... NXP Semiconductors VHF power MOS transistor 30 handbook, halfpage G p (dB 100 Class-B operation 0 150 Fig.18 Power gain as a function of frequency; typical values. MGP060 150 200 f (MHz) Rev December 2006 Product specification BLF147 ...
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... NXP Semiconductors VHF power MOS transistor BLF147 scattering parameters 1000 mA; note (MHz 0.91 170.00 10 0.91 174.60 20 0.92 177.40 30 0.92 178.40 40 0.92 178.80 50 0.92 178.80 60 0.92 179.00 70 0.93 179.20 80 0.93 179.60 90 0.93 179.70 100 0.94 179.70 125 0.95 179.50 150 0.95 179.00 175 0 ...
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... NXP Semiconductors VHF power MOS transistor PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 4 leads DIMENSIONS (millimetre dimensions are derived from the original inch dimensions UNIT 7.27 5.82 12.86 0.16 mm 5.56 6.17 0.10 12.59 0.229 0.506 0.286 0.006 inches 0.219 0.243 0.004 ...
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... For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail ...
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... NXP Semiconductors Revision history Revision history Document ID Release date BLF147_6 20061205 • Modifications: Correction made to BLF147_5 20061108 BLF147_4 20030901 (9397 750 11593) BLF147_3 20010523 (9397 750 08411) BLF147_CNV_2 19971215 (9397 750 xxxxx) Data sheet status Change notice Product data sheet - page 9 “ ...