BLF147 NXP Semiconductors, BLF147 Datasheet
BLF147
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BLF147 Summary of contents
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... BLF147 VHF power MOS transistor Rev. 06 — 5 December 2006 IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below ...
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... Fig.1 Simplified outline and symbol (V) (W) (dB) 28 150 (PEP 150 typ. 14 WARNING Rev December 2006 Product specification BLF147 DESCRIPTION drain source gate source MAM267 (%) (dB) (dB typ ...
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... Short-time operation during mismatch. DSon (2) Continuous operation. Rev December 2006 Product specification MIN. MAX 220 65 150 200 VALUE 0.8 0.2 300 (1) 200 (2) 100 100 Fig.3 Power derating curves. BLF147 UNIT UNIT K/W K/W MGP049 150 ...
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... 7 0 MHz 450 = MHz 360 = MHz 55 LIMITS (V) MIN. O 3.3 P 3.4 Q 3.5 R 3.6 S 3.7 T 3.8 U 3.9 V 4.0 W 4.1 X 4.2 Y 4.3 Z 4.4 BLF147 UNIT 4.5 V 100 MAX. 3.4 3.5 3.6 3.7 3.8 3.9 4.0 4.1 4.2 4.3 4.4 4 ...
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... Drain current as a function of gate-source voltage; typical values. 1400 C 1200 800 C is 400 MHz. Input and output capacitance as functions of drain-source voltage; typical values. BLF147 MGP051 (V) MRA903 ( ...
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... Maximum values at drive levels within the specified PEP values for either amplified tone. For the peak envelope power the values should be decreased by 6 dB. Ruggedness in class-AB operation The BLF147 is capable of withstanding a load mismatch corresponding to VSWR = 50:1 through all phases under the following conditions MHz at rated load power. ...
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... P L (W) PEP = 9 28.000 MHz 28.001 MHz typical values 100 P L (W) PEP = 9 28.000 MHz 28.001 MHz function of load power; typical values. BLF147 MGP054 200 MGP056 200 ...
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... VHF power MOS transistor handbook, full pagewidth input MHz. L3 D.U. Fig.13 Test circuit for class-AB operation. Rev December 2006 Product specification C8 C10 C12 C14 L7 output 50 C15 C9 C11 C13 MGP057 BLF147 ...
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... M 10 Rev December 2006 Product specification BLF147 DIMENSIONS CATALOGUE NO. 2222 809 07015 2222 852 47104 2222 852 47104 length 5 mm; int. dia. 6 mm; leads length length 8 mm; int. dia. 10 mm; ...
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... 6. 150 W (PEP 2 (series components); typical values 100 150 = 0 150 W. L (series components); typical values. BLF147 MGP059 (MHz) MGP062 200 f (MHz ...
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... VHF power MOS transistor 30 handbook, halfpage G p (dB 100 Class-B operation 0 150 Fig.18 Power gain as a function of frequency; typical values. MGP060 150 200 f (MHz) Rev December 2006 Product specification BLF147 ...
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... NXP Semiconductors VHF power MOS transistor BLF147 scattering parameters 1000 mA; note (MHz 0.91 170.00 10 0.91 174.60 20 0.92 177.40 30 0.92 178.40 40 0.92 178.80 50 0.92 178.80 60 0.92 179.00 70 0.93 179.20 80 0.93 179.60 90 0.93 179.70 100 0.94 179.70 125 0.95 179.50 150 0.95 179.00 175 0.96 178.10 200 0.96 177.50 250 0.97 175.80 300 ...
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... REFERENCES JEDEC EIAJ Rev December 2006 Product specification scale 24.90 6.48 12.32 0.25 0.51 24.63 6.22 12.06 45 0.98 0.255 0.485 0.01 0.02 0.97 0.245 0.475 EUROPEAN PROJECTION BLF147 SOT121B ISSUE DATE 99-03- ...
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... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev December 2006 BLF147 VHF power MOS transistor ...
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... NXP B.V. 2006. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Rev December 2006 BLF147 VHF power MOS transistor Supersedes BLF147_5 BLF147_4 BLF147_3 BLF147_CNV_2 - All rights reserved. Date of release: 5 December 2006 Document identifier: BLF147_6 ...