CGH40010F Cree Inc, CGH40010F Datasheet - Page 2

• Manufacturer Part Number: CGH40010F
• Description: TRANS 10W RF GAN HEMT 440166 PKG
• Manufacturer: Cree Inc

Specifications of CGH40010F

• Mfg Application Notes: Thermal Performance Guide
• Transistor Type: HEMT
• Frequency: 0Hz ~ 6GHz
• Gain: 14.5dB @ 3.7GHz
• Voltage - Rated: 84V
• Current Rating: 3.5A
• Current - Test: 200mA
• Voltage - Test: 28V
• Power - Output: 12.5W
• Package / Case: 440166
• For Use With: CGH40010F-TB - BOARD DEMO AMP CIRCUIT CGH40010
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Other names: CGH40010FE

Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Note:
1
2
3
Electrical Characteristics (T
Notes:
1
2
3
4
Copyright © 2006-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Storage Temperature
Operating Junction Temperature
Maximum Forward Gate Current
Soldering Temperature
Screw Torque
Thermal Resistance, Junction to Case
Case Operating Temperature
Characteristics
DC Characteristics
Gate Threshold Voltage
Gate Quiescent Voltage
Saturated Drain Current
Drain-Source Breakdown Voltage
RF Characteristics
Small Signal Gain
Power Output
Drain Efficiency
Output Mismatch Stress
Dynamic Characteristics
Input Capacitance
Output Capacitance
Feedback Capacitance
2
Refer to the Application Note on soldering at
Measured for the CGH40010F at P
See also, the Power Dissipation De-rating Curve on Page 6.
Measured on wafer prior to packaging.
P
Drain Efficiency = P
Measured in CGH40010-TB.
SAT
is defined as I
CGH40010 Rev 3.1
3
4
2
1
(T
1
G
C
= 25
OUT
= 0.36 mA.
2,3
/ P
˚
C, F
DC
0
2
= 3.7 GHz unless otherwise noted)
Symbol
VSWR
V
V
P
V
G
C
C
C
GS(th)
GS(Q)
I
DISS
DS
SAT
η
GD
BR
SS
GS
DS
C
= 14 W.
= 25˚C)
Symbol
Min.
12.5
-3.8
120
2.9
10
55
I
V
T
www.cree.com/products/wireless_appnotes.asp
–
–
–
–
–
R
V
GMAX
T
T
T
DSS
STG
τ
GS
θJC
S
C
J
Typ.
14.5
12.5
-3.3
-3.0
3.5
4.5
1.3
0.2
65
–
–
10 : 1
Max.
-2.3
–
–
–
–
–
–
–
–
–
-65, +150
-40, +150
-10, +2
Rating
225
245
4.0
8.0
84
60
Units
V
V
V
dB
%
pF
pF
pF
W
Y
A
DC
DC
DC
Conditions
V
V
V
V
V
V
V
No damage at all phase angles,
V
P
V
V
V
OUT
DS
DS
DS
GS
DD
DD
DD
DD
DS
DS
DS
= 10 V, I
= 28 V, I
= 6.0 V, V
= -8 V, I
= 28 V, I
= 28 V, I
= 28 V, I
= 28 V, I
= 28 V, V
= 28 V, V
= 28 V, V
= 10 W CW
D
D
D
DQ
DQ
DQ
DQ
gs
gs
gs
GS
= 3.6 mA
= 3.6 mA
= 200 mA
= -8 V, f = 1 MHz
= -8 V, f = 1 MHz
= -8 V, f = 1 MHz
= 200 mA
= 200 mA
= 200 mA, P
= 200 mA,
= 2.0 V
USA Tel: [phone]
Units
˚C/W
Volts
Volts
in-oz
www.cree.com/wireless
mA
˚C
˚C
˚C
˚C
Fax: [phone]
Durham, NC 27703
4600 Silicon Drive
SAT
Cree, Inc.