CGH40010F Cree Inc, CGH40010F Datasheet - Page 3

• Manufacturer Part Number: CGH40010F
• Description: TRANS 10W RF GAN HEMT 440166 PKG
• Manufacturer: Cree Inc

Specifications of CGH40010F

• Mfg Application Notes: Thermal Performance Guide
• Transistor Type: HEMT
• Frequency: 0Hz ~ 6GHz
• Gain: 14.5dB @ 3.7GHz
• Voltage - Rated: 84V
• Current Rating: 3.5A
• Current - Test: 200mA
• Voltage - Test: 28V
• Power - Output: 12.5W
• Package / Case: 440166
• For Use With: CGH40010F-TB - BOARD DEMO AMP CIRCUIT CGH40010
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Other names: CGH40010FE

Typical Performance
Copyright © 2006-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
3
CGH40010 Nominal Fixture Performance
CGH40010 Rev 3.1
-10
-20
20
10
0
18
17
16
15
14
13
12
11
10
3.50
2.5
P
DB(|S(2,1)|)
Fixture_2_G28V1L2w1_43_42
DB(|S(1,1)|)
Fixture_2_G28V1L2w1_43_42
Small Signal Gain and Return Loss vs Frequency
SAT
3.55
, Gain, and Drain Efficiency vs Frequency of the
of the CGH40010 in the CGH40010-TB
Psat, Gain, and Drain Efficiency vs Frequency of the
CGH40010F in the CGH40010-TB
3.60
Psat
Gain
Drain Eff
3
V
CGH40010F in the CGH40010-TB
DD
3.4 GHz
14.9 dB
VDD = 28 V, IDQ = 200 mA
= 28 V, I
3.65
Frequency (GHz)
Frequency (GHz)
S parameters
3.4 GHz
-10.65 dB
Efficiency
14.89 dB
3.6 GHz
Gain
P
3.70
DQ
3.5
SAT
= 200 mA
3.6 GHz
-7.497 dB
3.7 GHz
14.7 dB
3.7 GHz
-7.49 dB
3.75
3.8 GHz
-8.549 dB
3.8 GHz
14.31 dB
3.80
4
3.85
3.90
4.5
80
70
60
50
40
30
20
10
0
USA Tel: [phone]
www.cree.com/wireless
Fax: [phone]
Durham, NC 27703
4600 Silicon Drive
Cree, Inc.