CGH40010F Cree Inc, CGH40010F Datasheet - Page 4

• Manufacturer Part Number: CGH40010F
• Description: TRANS 10W RF GAN HEMT 440166 PKG
• Manufacturer: Cree Inc

Specifications of CGH40010F

• Mfg Application Notes: Thermal Performance Guide
• Transistor Type: HEMT
• Frequency: 0Hz ~ 6GHz
• Gain: 14.5dB @ 3.7GHz
• Voltage - Rated: 84V
• Current Rating: 3.5A
• Current - Test: 200mA
• Voltage - Test: 28V
• Power - Output: 12.5W
• Package / Case: 440166
• For Use With: CGH40010F-TB - BOARD DEMO AMP CIRCUIT CGH40010
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Other names: CGH40010FE

Typical Performance
Copyright © 2006-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
4
CGH40010 Rev 3.1
and Load Impedances Optimized for Drain Efficiency at 2.0 GHz
and Load Impedances Optimized for Drain Efficiency at 3.6 GHz
18
17
16
15
14
13
12
16
15
14
13
12
10
11
Swept CW Data of CGH40010F vs. Output Power with Source
Swept CW Data of CGH40010F vs. Output Power with Source
26
23
25
28
and Load Impedances Optimized for Drain Efficiency at 3.6 GHz
and Load Impedances Optimized for Drain Efficiency at 2.0 GHz
27
Swept CW Data of CGH40015F vs. Output Power with Source
Swept CW Data of CGH40015F vs. Output Power with Source
30
V
V
VDD = 28 V, IDQ = 200 mA, Freq = 2.0 GHz
VDD = 28 V, IDQ = 200 mA, Freq = 3.6 GHz
29
DD
DD
32
= 28 V, I
= 28 V, I
31
Pout (dBm)
Pout (dBm)
34
33
DQ
DQ
= 200 mA
= 200 mA
36
35
37
38
39
40
41
42
43
80
70
60
50
40
30
20
10
0
80
72
64
56
48
40
32
24
16
8
0
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www.cree.com/wireless
Fax: [phone]
Durham, NC 27703
4600 Silicon Drive
Cree, Inc.