CGH40010F Cree Inc, CGH40010F Datasheet - Page 7

• Manufacturer Part Number: CGH40010F
• Description: TRANS 10W RF GAN HEMT 440166 PKG
• Manufacturer: Cree Inc

Specifications of CGH40010F

• Mfg Application Notes: Thermal Performance Guide
• Transistor Type: HEMT
• Frequency: 0Hz ~ 6GHz
• Gain: 14.5dB @ 3.7GHz
• Voltage - Rated: 84V
• Current Rating: 3.5A
• Current - Test: 200mA
• Voltage - Test: 28V
• Power - Output: 12.5W
• Package / Case: 440166
• For Use With: CGH40010F-TB - BOARD DEMO AMP CIRCUIT CGH40010
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Other names: CGH40010FE

Source and Load Impedances
CGH40010 Power Dissipation De-rating Curve
Copyright © 2006-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
7
CGH40010 Rev 3.1
Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2).
16
14
12
10
8
6
4
2
0
0
Frequency (MHz)
Note 1. V
Note 2. Optimized for power, gain, P
Note 3. When using this device at low frequency, series resistors
should be used to maintain amplifier stability.
1000
1500
2500
3500
500
25
CGH40010F CW Power Dissipation De-rating Curve
Z Source
DD
50
= 28V, I
G
75
Maximum Case Temperature (°C)
DQ
= 200mA in the 440166 package.
100
20.2 + j16.18
8.38 + j9.46
3.19 - j4.76
3.18 - j13.3
Z Source
7.37 + j0
125
D
S
SAT
150
and PAE.
175
Z Load
51.7 + j15.2
41.4 + j28.5
14.6 + j7.46
28.15 + j29
19 + j9.2
200
Z Load
Note 1
225
250
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4600 Silicon Drive
Cree, Inc.