BLF871,112 NXP Semiconductors, BLF871,112 Datasheet - Page 8

• Manufacturer Part Number: BLF871,112
• Description: TRANSISTOR RF LDMOS SOT467C
• Manufacturer: NXP Semiconductors

Specifications of BLF871,112

• Package / Case: SOT467C
• Transistor Type: LDMOS
• Frequency: 860MHz
• Gain: 19dB
• Voltage - Rated: 89V
• Current Rating: 1.4µA
• Current - Test: 500mA
• Voltage - Test: 40V
• Power - Output: 100W
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 0.21 Ohms
• Drain-source Breakdown Voltage: 89 V
• Gate-source Breakdown Voltage: 13 V
• Power Dissipation: 24 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-4737; 934062051112

NXP Semiconductors
BLF871_BLF871S_4
Product data sheet
Fig 9.
Fig 11. DVB-T PAR at 0.1 % and at 0.01 % probability on the CCDF as function of frequency; typical values
(dB)
G
(1) V
(2) V
(1) PAR at 0.01 % probability on the CCDF; V
(2) PAR at 0.01 % probability on the CCDF; V
(3) PAR at 0.1 % probability on the CCDF; V
(4) PAR at 0.1 % probability on the CCDF; V
p
22
20
18
16
400
I
test circuit as described in
DVB-T power gain and drain efficiency as
functions of frequency; typical values
I
PAR of input signal = 9.5 dB at 0.01 % probability on CCDF.
Dq
Dq
DS
DS
= 0.5 A; measured in a common source broadband
= 0.5 A; measured in a common source broadband test circuit as described in
= 40 V; P
= 42 V; P
7.2.2 DVB-T
500
G
η
D
p
L(AV)
L(AV)
600
= 22 W
= 24 W
700
Section
(2)
(1)
(1)
(2)
PAR
(dB)
9
8
7
6
5
400
8.
800
001aaj284
f (MHz)
DS
DS
DS
DS
Rev. 04 — 19 November 2009
500
= 40 V; P
= 42 V; P
900
= 40 V; P
= 42 V; P
50
40
30
20
(%)
η
D
600
L(AV)
L(AV)
L(AV)
L(AV)
= 22 W
= 24 W
= 22 W
= 24 W
Fig 10. DVB-T third order intermodulation distortion
700
IMD3
(dBc)
(1)
(2)
(3)
(4)
(1) V
(2) V
−20
−40
−60
0
400
I
test circuit as described in
as a function of frequency; typical values
800
Dq
DS
DS
001aaj286
f (MHz)
= 0.5 A; measured in a common source broadband
= 40 V; P
= 42 V; P
500
900
BLF871; BLF871S
Section
L(AV)
L(AV)
600
UHF power LDMOS transistor
= 22 W
= 24 W
8.
700
Section
(2)
(1)
8.
© NXP B.V. 2010. All rights reserved.
800
001aaj285
f (MHz)
900
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