BLF871 NXP Semiconductors, BLF871 Datasheet
BLF871
Specifications of BLF871
Available stocks
Related parts for BLF871
BLF871 Summary of contents
Page 1
... BLF871; BLF871S UHF power LDMOS transistor Rev. 04 — 19 November 2009 1. Product profile 1.1 General description A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 100 W broadband from GHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications ...
Page 2
... Pinning Description drain gate source drain gate source Ordering information Name Description - flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT467C - earless LDMOST ceramic package; 2 leads Rev. 04 — 19 November 2009 BLF871; BLF871S UHF power LDMOS transistor Simplified outline Graphic symbol 1 [ sym112 1 [ sym112 ...
Page 3
... Thermal characteristics Parameter thermal resistance from junction to case Characteristics Conditions 3 MHz MHz MHz Rev. 04 — 19 November 2009 BLF871; BLF871S UHF power LDMOS transistor Min Max - 89 −0.5 +13 −65 +150 - 200 Conditions Typ = 80 °C; [1] T 0.95 case L(AV) Min Typ Max [ 1. 105 [ ...
Page 4
... RF performance in a common-source narrowband 860 MHz test circuit L(PEP) (MHz) (V) (A) ( 860; 40 0.5 100 860.1 2 858 40 0.5 - Rev. 04 — 19 November 2009 BLF871; BLF871S UHF power LDMOS transistor 001aaj276 (V) DS η IMD3 PAR L(AV (W) (dB) (%) (dBc) (dB) > 19 > 44 < − > 19 > 30 < −31 ...
Page 5
... P (W) L(AV narrowband 860 MHz test circuit. (1) Low frequency component (2) High frequency component Fig 4. 2-Tone third order intermodulation distortion as a function of average load power; typical values Rev. 04 — 19 November 2009 BLF871; BLF871S UHF power LDMOS transistor 001aaj277 80 η D (%) 120 180 P (W) ...
Page 6
... narrowband 860 MHz test circuit. (1) Low frequency component (2) High frequency component Fig 6. DVB-T third order intermodulation distortion as a function of average load power; typical values Rev. 04 — 19 November 2009 BLF871; BLF871S UHF power LDMOS transistor 001aaj281 (1) ( (W) L(AV) = 0.5 A; measured in a common source Dq © ...
Page 7
... A; measured in a common source broadband Dq 8. test circuit as described Fig 8. 2-Tone third order intermodulation distortion as a function of frequency; typical values Rev. 04 — 19 November 2009 BLF871; BLF871S UHF power LDMOS transistor 001aaj283 (2) (1) 500 600 700 800 900 f (MHz) Section L(AV) ...
Page 8
... L(AV L(AV L(AV L(AV) Rev. 04 — 19 November 2009 BLF871; BLF871S UHF power LDMOS transistor 001aaj285 (2) (1) 500 600 700 800 900 f (MHz) Section L(AV L(AV) 900 Section 8. © NXP B.V. 2010. All rights reserved ...
Page 9
... NXP Semiconductors 7.3 Ruggedness in class-AB operation The BLF871 and BLF871S are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions 860 MHz at rated power. 7.4 Impedance information Fig 12. Definition of transistor impedance Table 8. Simulated Z f (MHz) 300 325 ...
Page 10
... DS(DC) Rev. 04 — 19 November 2009 BLF871; BLF871S UHF power LDMOS transistor = (Ω) 2.456 + j2.455 2.378 + j2.388 2.303 + j2.320 2.230 + j2.250 001aaj287 4 ...
Page 11
... F/m; height = 0.79 mm; Cu (top/bottom metallization); r Rev. 04 — 19 November 2009 BLF871; BLF871S UHF power LDMOS transistor Remarks [1] [2] [1] [1] [1] [1] TDK C570X7R1H106KT000N or capacitor of same quality. [3] [3] Tekelec [3] [3] (W × × [4] (W × L) 2.4 mm × [4] (W × ...
Page 12
L23 C25 L22 C24 See Table 9 for a list of components. Fig 14. Class-AB common-source broadband amplifier C11 C12 C27 C26 C20 C1 ...
Page 13
... NXP Semiconductors 40 mm Fig 15. Printed-Circuit Board (PCB) for class-AB common source amplifier BLF871_BLF871S_4 Product data sheet BLF871; BLF871S 40 mm Rev. 04 — 19 November 2009 UHF power LDMOS transistor 76.2 mm 001aaj289 © NXP B.V. 2010. All rights reserved ...
Page 14
... Fig 16. Component layout for class-AB common source amplifier BLF871_BLF871S_4 Product data sheet C11 C9 C27 C20 C22 L20 L1 C21 C2 L7 C10 Rev. 04 — 19 November 2009 BLF871; BLF871S UHF power LDMOS transistor C12 001aaj290 © NXP B.V. 2010. All rights reserved ...
Page 15
... REFERENCES JEDEC EIAJ Rev. 04 — 19 November 2009 BLF871; BLF871S UHF power LDMOS transistor SOT467C 20.45 5.97 14.27 0.25 0.51 20.19 5.72 ...
Page 16
... References JEDEC JEITA Rev. 04 — 19 November 2009 BLF871; BLF871S UHF power LDMOS transistor 5.97 0.25 5.72 0.235 0.01 0.225 sot467b_po European Issue date projection 08-12-09 09-10-27 © ...
Page 17
... TTF UHF VSWR 11. Revision history Table 11. Revision history Document ID Release date BLF871_BLF871S_4 20091119 • Modifications: This document now describes both the BLF871 and the BLF871S. BLF871_3 20090921 BLF871_2 20090305 BLF871_1 20081218 BLF871_BLF871S_4 Product data sheet Abbreviations Description Continuous Wave Complementary Cumulative Distribution Function ...
Page 18
... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev. 04 — 19 November 2009 BLF871; BLF871S UHF power LDMOS transistor © NXP B.V. 2010. All rights reserved ...
Page 19
... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 19 November 2009 Document identifier: BLF871_BLF871S_4 All rights reserved. ...