BLF871 NXP Semiconductors, BLF871 Datasheet - Page 14

LDMOS,RF,100W,UHF,50V

BLF871

Manufacturer Part Number
BLF871
Description
LDMOS,RF,100W,UHF,50V
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF871

Drain Source Voltage Vds
89V
Continuous Drain Current Id
3.7A
Operating Frequency Range
108MHz To 225MHz
Rf Transistor Case
SOT-467C
No. Of Pins
2
Transistor Type
RF MOSFET
Application
UHF
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
89V
Output Power (max)
100W(Typ)
Power Gain (typ)@vds
21@40V/21@40V/22@40VdB
Frequency (max)
860MHz
Package Type
LDMOST
Pin Count
3
Drain Source Resistance (max)
210(Typ)@6.15Vmohm
Input Capacitance (typ)@vds
95@40VpF
Output Capacitance (typ)@vds
30@40VpF
Reverse Capacitance (typ)
1@40VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
60%
Mounting
Screw
Mode Of Operation
2-Tone Class-AB/CW Class-AB/DVB-T
Number Of Elements
1
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Manufacturer
Quantity
Price
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ROHM
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Part Number:
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NXP Semiconductors
BLF871_BLF871S_4
Product data sheet
Fig 16. Component layout for class-AB common source amplifier
See
C25
Table 9
L23
for a list of components.
C24
L23
C26
C23
L21
R2
R1
C27
C22
C20
C21
Rev. 04 — 19 November 2009
L20
L6
L7
C9
C1
C2
C10
L1
C11
C3
C4
BLF871; BLF871S
C12
L2
UHF power LDMOS transistor
C5
L3
C6
L4
C8
L5
© NXP B.V. 2010. All rights reserved.
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C7
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