BLF871 NXP Semiconductors, BLF871 Datasheet - Page 6

• Manufacturer Part Number: BLF871
• Description: LDMOS,RF,100W,UHF,50V
• Manufacturer: NXP Semiconductors

Specifications of BLF871

• Drain Source Voltage Vds: 89V
• Continuous Drain Current Id: 3.7A
• Operating Frequency Range: 108MHz To 225MHz
• Rf Transistor Case: SOT-467C
• No. Of Pins: 2
• Transistor Type: RF MOSFET
• Application: UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 89V
• Output Power (max): 100W(Typ)
• Power Gain (typ)@vds: 21@40V/21@40V/22@40VdB
• Frequency (max): 860MHz
• Package Type: LDMOST
• Pin Count: 3
• Drain Source Resistance (max): 210(Typ)@6.15Vmohm
• Input Capacitance (typ)@vds: 95@40VpF
• Output Capacitance (typ)@vds: 30@40VpF
• Reverse Capacitance (typ): 1@40VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 60%
• Mounting: Screw
• Mode Of Operation: 2-Tone Class-AB/CW Class-AB/DVB-T
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
BLF871_BLF871S_4
Product data sheet
Fig 5.
(dB)
G
p
24
22
20
18
0
V
narrowband 860 MHz test circuit.
DVB-T power gain and drain efficiency as
functions of average load power; typical
values
DS
= 40 V; I
7.1.3 DVB-T
G
η
D
p
Dq
20
= 0.5 A; measured in a common source
40
P
L(AV)
001aaj280
(W)
Rev. 04 — 19 November 2009
60
60
40
20
0
(%)
η
D
Fig 6.
IMD3
(dBc)
(1) Low frequency component
(2) High frequency component
−15
−25
−35
−45
−55
0
V
narrowband 860 MHz test circuit.
DVB-T third order intermodulation distortion
as a function of average load power; typical
values
DS
= 40 V; I
BLF871; BLF871S
Dq
20
= 0.5 A; measured in a common source
(1)
(2)
UHF power LDMOS transistor
40
P
L(AV)
© NXP B.V. 2010. All rights reserved.
001aaj281
(W)
60
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