BLF871 NXP Semiconductors, BLF871 Datasheet - Page 8

• Manufacturer Part Number: BLF871
• Description: LDMOS,RF,100W,UHF,50V
• Manufacturer: NXP Semiconductors

Specifications of BLF871

• Drain Source Voltage Vds: 89V
• Continuous Drain Current Id: 3.7A
• Operating Frequency Range: 108MHz To 225MHz
• Rf Transistor Case: SOT-467C
• No. Of Pins: 2
• Transistor Type: RF MOSFET
• Application: UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 89V
• Output Power (max): 100W(Typ)
• Power Gain (typ)@vds: 21@40V/21@40V/22@40VdB
• Frequency (max): 860MHz
• Package Type: LDMOST
• Pin Count: 3
• Drain Source Resistance (max): 210(Typ)@6.15Vmohm
• Input Capacitance (typ)@vds: 95@40VpF
• Output Capacitance (typ)@vds: 30@40VpF
• Reverse Capacitance (typ): 1@40VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 60%
• Mounting: Screw
• Mode Of Operation: 2-Tone Class-AB/CW Class-AB/DVB-T
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
BLF871_BLF871S_4
Product data sheet
Fig 9.
Fig 11. DVB-T PAR at 0.1 % and at 0.01 % probability on the CCDF as function of frequency; typical values
(dB)
G
(1) V
(2) V
(1) PAR at 0.01 % probability on the CCDF; V
(2) PAR at 0.01 % probability on the CCDF; V
(3) PAR at 0.1 % probability on the CCDF; V
(4) PAR at 0.1 % probability on the CCDF; V
p
22
20
18
16
400
I
test circuit as described in
DVB-T power gain and drain efficiency as
functions of frequency; typical values
I
PAR of input signal = 9.5 dB at 0.01 % probability on CCDF.
Dq
Dq
DS
DS
= 0.5 A; measured in a common source broadband
= 0.5 A; measured in a common source broadband test circuit as described in
= 40 V; P
= 42 V; P
7.2.2 DVB-T
500
G
η
D
p
L(AV)
L(AV)
600
= 22 W
= 24 W
700
Section
(2)
(1)
(1)
(2)
PAR
(dB)
9
8
7
6
5
400
8.
800
001aaj284
f (MHz)
DS
DS
DS
DS
Rev. 04 — 19 November 2009
500
= 40 V; P
= 42 V; P
900
= 40 V; P
= 42 V; P
50
40
30
20
(%)
η
D
600
L(AV)
L(AV)
L(AV)
L(AV)
= 22 W
= 24 W
= 22 W
= 24 W
Fig 10. DVB-T third order intermodulation distortion
700
IMD3
(dBc)
(1)
(2)
(3)
(4)
(1) V
(2) V
−20
−40
−60
0
400
I
test circuit as described in
as a function of frequency; typical values
800
Dq
DS
DS
001aaj286
f (MHz)
= 0.5 A; measured in a common source broadband
= 40 V; P
= 42 V; P
500
900
BLF871; BLF871S
Section
L(AV)
L(AV)
600
UHF power LDMOS transistor
= 22 W
= 24 W
8.
700
Section
(2)
(1)
8.
© NXP B.V. 2010. All rights reserved.
800
001aaj285
f (MHz)
900
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