BLF871 NXP Semiconductors, BLF871 Datasheet - Page 17

LDMOS,RF,100W,UHF,50V

BLF871

Manufacturer Part Number
BLF871
Description
LDMOS,RF,100W,UHF,50V
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF871

Drain Source Voltage Vds
89V
Continuous Drain Current Id
3.7A
Operating Frequency Range
108MHz To 225MHz
Rf Transistor Case
SOT-467C
No. Of Pins
2
Transistor Type
RF MOSFET
Application
UHF
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
89V
Output Power (max)
100W(Typ)
Power Gain (typ)@vds
21@40V/21@40V/22@40VdB
Frequency (max)
860MHz
Package Type
LDMOST
Pin Count
3
Drain Source Resistance (max)
210(Typ)@6.15Vmohm
Input Capacitance (typ)@vds
95@40VpF
Output Capacitance (typ)@vds
30@40VpF
Reverse Capacitance (typ)
1@40VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
60%
Mounting
Screw
Mode Of Operation
2-Tone Class-AB/CW Class-AB/DVB-T
Number Of Elements
1
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BLF871
Manufacturer:
ROHM
Quantity:
12 000
Part Number:
BLF871,112
Manufacturer:
UMS
Quantity:
1 400
Part Number:
BLF871S
Manufacturer:
TOSHIBA
Quantity:
5 000
Part Number:
BLF871S112
Manufacturer:
NXP Semiconductors
Quantity:
135
NXP Semiconductors
10. Abbreviations
11. Revision history
Table 11.
BLF871_BLF871S_4
Product data sheet
Document ID
BLF871_BLF871S_4
Modifications:
BLF871_3
BLF871_2
BLF871_1
Revision history
Table 10.
Acronym
CW
CCDF
DVB
DVB-T
ESD
HF
IMD3
LDMOS
LDMOST
OFDM
PAR
PEP
RF
TTF
UHF
VSWR
Release date
20091119
20090921
20090305
20081218
This document now describes both the BLF871 and the BLF871S.
Abbreviations
Data sheet status
Product data sheet
Product data sheet
Preliminary data sheet
Objective data sheet
Rev. 04 — 19 November 2009
Description
Continuous Wave
Complementary Cumulative Distribution Function
Digital Video Broadcast
Digital Video Broadcast - Terrestrial
ElectroStatic Discharge
High Frequency
Third order InterModulation Distortion
Laterally Diffused Metal-Oxide Semiconductor
Laterally Diffused Metal-Oxide Semiconductor Transistor
Orthogonal Frequency Division Multiplexing
Peak-to-Average power Ratio
Peak Envelope Power
Radio Frequency
Time To Failure
Ultra High Frequency
Voltage Standing-Wave Ratio
Change notice
-
-
-
-
BLF871; BLF871S
UHF power LDMOS transistor
Supersedes
BLF871_3
BLF871_2
BLF871_1
-
© NXP B.V. 2010. All rights reserved.
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