BLF871 NXP Semiconductors, BLF871 Datasheet - Page 3
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BLF871
Manufacturer Part Number
BLF871
Description
LDMOS,RF,100W,UHF,50V
Manufacturer
NXP Semiconductors
Datasheet
1.BLF871112.pdf
(19 pages)
Specifications of BLF871
Drain Source Voltage Vds
89V
Continuous Drain Current Id
3.7A
Operating Frequency Range
108MHz To 225MHz
Rf Transistor Case
SOT-467C
No. Of Pins
2
Transistor Type
RF MOSFET
Application
UHF
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
89V
Output Power (max)
100W(Typ)
Power Gain (typ)@vds
21@40V/21@40V/22@40VdB
Frequency (max)
860MHz
Package Type
LDMOST
Pin Count
3
Drain Source Resistance (max)
210(Typ)@6.15Vmohm
Input Capacitance (typ)@vds
95@40VpF
Output Capacitance (typ)@vds
30@40VpF
Reverse Capacitance (typ)
1@40VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
60%
Mounting
Screw
Mode Of Operation
2-Tone Class-AB/CW Class-AB/DVB-T
Number Of Elements
1
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BLF871
Manufacturer:
ROHM
Quantity:
12 000
Company:
Part Number:
BLF871,112
Manufacturer:
UMS
Quantity:
1 400
Company:
Part Number:
BLF871S
Manufacturer:
TOSHIBA
Quantity:
5 000
Company:
Part Number:
BLF871S112
Manufacturer:
NXP Semiconductors
Quantity:
135
NXP Semiconductors
4. Limiting values
5. Thermal characteristics
6. Characteristics
BLF871_BLF871S_4
Product data sheet
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 5.
[1]
Table 6.
T
[1]
Symbol
V
V
T
T
Symbol
R
Symbol Parameter
V
V
I
I
I
R
C
C
C
DSS
DSX
GSS
j
DS
GS
stg
j
(BR)DSS
GS(th)
th(j-c)
DS(on)
iss
oss
rss
= 25
R
I
D
th(j-c)
is the drain current.
°
C unless otherwise specified.
is measured under RF conditions.
drain-source breakdown voltage V
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
drain-source on-state resistance V
input capacitance
output capacitance
reverse transfer capacitance
Limiting values
Thermal characteristics
Characteristics
Parameter
thermal resistance from junction to case
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
Rev. 04 — 19 November 2009
Conditions
V
V
V
V
V
I
V
f = 1 MHz
V
f = 1 MHz
V
f = 1 MHz
D
GS
DS
GS
GS
DS
GS
GS
GS
GS
GS
= 3.7 A
Conditions
= 10 V; I
= 10 V
= 0 V; I
= 0 V; V
= V
= 10 V; V
= V
= 0 V; V
= 0 V; V
= 0 V; V
GS(th)
GS(th)
BLF871; BLF871S
D
DS
DS
DS
DS
D
= 1.12 mA
+ 3.75 V;
+ 3.75 V;
DS
= 112 mA
= 40 V
= 40 V;
= 40 V;
= 40 V;
= 0 V
Conditions
T
P
case
L(AV)
UHF power LDMOS transistor
= 80 °C;
= 50 W
Min
-
−0.5
−65
-
[1]
[1]
[1]
Min Typ Max
89
1.4
-
16.7 20
-
-
-
-
-
© NXP B.V. 2010. All rights reserved.
Max
89
+13
+150
200
-
-
-
-
210 -
95
30
1
[1]
Typ
0.95
105.5 V
2.4
1.4
-
140
-
-
-
Unit
V
V
°C
°C
Unit
K/W
3 of 19
Unit
V
μA
A
nA
mΩ
pF
pF
pF