BLF871 NXP Semiconductors, BLF871 Datasheet - Page 9

• Manufacturer Part Number: BLF871
• Description: LDMOS,RF,100W,UHF,50V
• Manufacturer: NXP Semiconductors

Specifications of BLF871

• Drain Source Voltage Vds: 89V
• Continuous Drain Current Id: 3.7A
• Operating Frequency Range: 108MHz To 225MHz
• Rf Transistor Case: SOT-467C
• No. Of Pins: 2
• Transistor Type: RF MOSFET
• Application: UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 89V
• Output Power (max): 100W(Typ)
• Power Gain (typ)@vds: 21@40V/21@40V/22@40VdB
• Frequency (max): 860MHz
• Package Type: LDMOST
• Pin Count: 3
• Drain Source Resistance (max): 210(Typ)@6.15Vmohm
• Input Capacitance (typ)@vds: 95@40VpF
• Output Capacitance (typ)@vds: 30@40VpF
• Reverse Capacitance (typ): 1@40VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 60%
• Mounting: Screw
• Mode Of Operation: 2-Tone Class-AB/CW Class-AB/DVB-T
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
BLF871_BLF871S_4
Product data sheet
7.3 Ruggedness in class-AB operation
7.4 Impedance information
The BLF871 and BLF871S are capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
f = 860 MHz at rated power.
Table 8.
Simulated Z
f
(MHz)
300
325
350
375
400
425
450
475
500
525
550
575
600
625
650
675
700
725
750
775
800
825
850
875
900
Fig 12. Definition of transistor impedance
Typical impedance
i
and Z
L
device impedance; impedance info at V
Rev. 04 — 19 November 2009
Z
(Ω)
0.977 − j3.327
0.977 − j2.983
0.978 − j2.681
0.979 − j2.414
0.979 − j2.174
0.980 − j1.956
0.981 − j1.758
0.982 − j1.576
0.982 − j1.407
0.983 − j1.250
0.984 − j1.103
0.985 − j0.964
0.986 − j0.834
0.987 − j0.709
0.988 − j0.591
0.990 − j0.478
0.991 − j0.370
0.992 − j0.266
0.993 − j0.165
0.995 − j0.068
0.996 + j0.026
0.997 + j0.117
0.999 + j0.206
1.000 + j0.292
1.002 + j0.376
i
Z
i
gate
001aai086
drain
BLF871; BLF871S
Z
L
DS
= 42 V.
UHF power LDMOS transistor
Z
(Ω)
5.506 + j1.774
5.366 + j1.858
5.223 + j1.930
5.078 + j1.990
4.932 + j2.040
4.786 + j2.079
4.640 + j2.108
4.495 + j2.128
4.352 + j2.138
4.212 + j2.140
4.074 + j2.135
3.940 + j2.122
3.809 + j2.102
3.682 + j2.077
3.558 + j2.045
3.438 + j2.009
3.323 + j1.968
3.211 + j1.923
3.103 + j1.874
3.000 + j1.822
2.900 + j1.766
2.804 + j1.708
2.711 + j1.648
2.623 + j1.586
2.538 + j1.521
L
DS
= 42 V;
© NXP B.V. 2010. All rights reserved.
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