BLF871 NXP Semiconductors, BLF871 Datasheet - Page 2

• Manufacturer Part Number: BLF871
• Description: LDMOS,RF,100W,UHF,50V
• Manufacturer: NXP Semiconductors

Specifications of BLF871

• Drain Source Voltage Vds: 89V
• Continuous Drain Current Id: 3.7A
• Operating Frequency Range: 108MHz To 225MHz
• Rf Transistor Case: SOT-467C
• No. Of Pins: 2
• Transistor Type: RF MOSFET
• Application: UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 89V
• Output Power (max): 100W(Typ)
• Power Gain (typ)@vds: 21@40V/21@40V/22@40VdB
• Frequency (max): 860MHz
• Package Type: LDMOST
• Pin Count: 3
• Drain Source Resistance (max): 210(Typ)@6.15Vmohm
• Input Capacitance (typ)@vds: 95@40VpF
• Output Capacitance (typ)@vds: 30@40VpF
• Reverse Capacitance (typ): 1@40VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 60%
• Mounting: Screw
• Mode Of Operation: 2-Tone Class-AB/CW Class-AB/DVB-T
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
2. Pinning information
3. Ordering information
BLF871_BLF871S_4
Product data sheet
1.3 Applications
Table 2.
[1]
Table 3.
Pin
BLF871 (SOT467C)
1
2
3
BLF871S (SOT467B)
1
2
3
Type number Package
BLF871
BLF871S
Integrated ESD protection
Excellent ruggedness
High power gain
High efficiency
Excellent reliability
Easy power control
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
Communication transmitter applications in the UHF band
Industrial applications in the UHF band
Connected to flange.
Pinning
Ordering information
Description
drain
gate
source
drain
gate
source
Name Description
-
-
Rev. 04 — 19 November 2009
flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT467C
earless LDMOST ceramic package; 2 leads
[1]
[1]
Simplified outline
BLF871; BLF871S
UHF power LDMOS transistor
1
2
1
2
3
3
Graphic symbol
© NXP B.V. 2010. All rights reserved.
2
2
sym112
sym112
Version
SOT467B
1
3
1
3
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