BLF248,112 NXP Semiconductors, BLF248,112 Datasheet - Page 10

TRANSISTOR RF DMOS SOT262A1

BLF248,112

Manufacturer Part Number
BLF248,112
Description
TRANSISTOR RF DMOS SOT262A1
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF248,112

Package / Case
SOT-262A1
Transistor Type
2 N-Channel (Dual)
Frequency
225MHz
Gain
11.5dB
Voltage - Rated
65V
Current Rating
25A
Voltage - Test
28V
Power - Output
300W
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Product Type
RF MOSFET Power
Resistance Drain-source Rds (on)
0.15 Ohms
Transistor Polarity
N-Channel
Configuration
Dual Common Source
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
25 A
Power Dissipation
500 W
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Current - Test
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-2389
934006630112
BLF248
BLF248
Philips Semiconductors
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. L1, L3 to L11, L16 to L22 and L24 are micro-striplines on a double copper-clad printed-circuit board, with glass
3. L2 and L23 are soldered on striplines L1 and L24 respectively.
4. A copper strap, thickness 0.8 mm, is soldered on striplines L16 to L21.
2003 Sep 02
R3, R4
R7, R8
R9
IC1
VHF push-pull power MOS transistor
COMPONENT
microfibre PTFE dielectric (
0.4 W metal film resistor
1 W metal film resistor
1 W metal film resistor
78L05 voltage regulator
DESCRIPTION
r
= 2.2), thickness
1
16
inch, thickness of copper sheet 2
10
536
10
3.16 k
VALUE
5%
DIMENSIONS
35 m.
Product specification
CATALOGUE NO.
BLF248

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