BLF248,112 NXP Semiconductors, BLF248,112 Datasheet - Page 11

• Manufacturer Part Number: BLF248,112
• Description: TRANSISTOR RF DMOS SOT262A1
• Manufacturer: NXP Semiconductors

Specifications of BLF248,112

• Package / Case: SOT-262A1
• Transistor Type: 2 N-Channel (Dual)
• Frequency: 225MHz
• Gain: 11.5dB
• Voltage - Rated: 65V
• Current Rating: 25A
• Voltage - Test: 28V
• Power - Output: 300W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: RF MOSFET Power
• Resistance Drain-source Rds (on): 0.15 Ohms
• Transistor Polarity: N-Channel
• Configuration: Dual Common Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 25 A
• Power Dissipation: 500 W
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Current - Test: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-2389; 934006630112; BLF248; BLF248

handbook, full pagewidth
Philips Semiconductors
2003 Sep 02
VHF push-pull power MOS transistor
Dimensions in mm.
The circuit and components are situated on one side of the printed circuit board, the other side being fully
metallized, to serve as a ground plane. Earth connections are made by means of copper straps and hollow rivets.
hollow rivets
L1
L3
V DD1
L2
Fig.12 Component layout for 225 MHz class-AB test circuit.
119
R9
C1
C2
C34
C3
IC1
C11
L4
L5
C8
slider R1
slider R6
to R1, R6
C5
copper strap
R2
R5
C33
C31
C32
R3
R4
L6
L7
C10
C4
C9
C7
C6
L8
L9
100
11
C18
L10
L11
C19
C22
C13
C14
C25
C26
L16
L17
L13
C23
C24
L14
hollow rivet
L12
L12
R7
L15
L15
R8
L18
L19
C12
C15
C27
V DD1
V DD2
C16
C21
C17
C20
L20
C28
L21
C29
C30
copper strap
130
L23
hollow rivets
L24
L22
Product specification
BLF248
MGP213