PD85035-E STMicroelectronics, PD85035-E Datasheet - Page 4
![TRANS RF POWER LDMOST N-CH](/photos/5/64/56415/pd85035-e_sml.jpg)
PD85035-E
Manufacturer Part Number
PD85035-E
Description
TRANS RF POWER LDMOST N-CH
Manufacturer
STMicroelectronics
Datasheet
1.PD85035-E.pdf
(15 pages)
Specifications of PD85035-E
Transistor Type
LDMOS
Frequency
870MHz
Gain
17dB
Voltage - Rated
40V
Current Rating
8A
Current - Test
350mA
Voltage - Test
13.6V
Power - Output
15W
Package / Case
PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Configuration
Single
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
- 0.5 V to + 15 V
Continuous Drain Current
8 A
Power Dissipation
95 W
Maximum Operating Temperature
+ 165 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
40V
Output Power (max)
40W(Typ)
Power Gain (typ)@vds
17dB
Frequency (max)
1GHz
Package Type
PowerSO
Pin Count
3
Input Capacitance (typ)@vds
76@12.5VpF
Output Capacitance (typ)@vds
45@12.5VpF
Reverse Capacitance (typ)
1.4@12.5VpF
Operating Temp Range
-65C to 165C
Drain Efficiency (typ)
72%
Mounting
Surface Mount
Number Of Elements
1
Power Dissipation (max)
95000mW
Vswr (max)
20(Min)
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Details
Other names
497-8299
497-8299-5
497-8299
PD85035-E
497-8299-5
497-8299
PD85035-E
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PD85035-E
Manufacturer:
ST
Quantity:
20 000
Electrical characteristics
2
2.1
2.2
2.3
2.4
4/15
Electrical characteristics
Static
Table 4.
Dynamic
Table 5.
ESD protection characteristics
Table 6.
Moisture sensitivity level
Table 7.
mismatch
Symbol
Symbol
V
V
C
C
Load
P3dB
DS(ON)
I
C
I
GS(Q)
GSS
G
DSS
h
OSS
RSS
ISS
D
P
T
CASE
V
V
V
V
All phase angles
V
V
V
V
V
V
V
Static
Dynamic
ESD protection characteristics
Moisture sensitivity level
DD
DD
DD
DD
GS
GS
DS
GS
GS
GS
GS
= 13.6 V, I
= 13.6 V, I
= 13.6 V, I
= 1 7V, I
= 0 V
= 5 V
= 10 V
= 10 V
= 0 V
= 0 V
= 0 V
= +25 °C
Human body model
Test methodology
DQ
Test conditions
Machine model
DQ
DQ
DQ
J-STD-020B
= 350 mA, P
= 350 mA
= 350 mA, P
= 350 mA, P
Test conditions
Test conditions
V
V
V
V
V
I
DS
I
D
D
DS
DS
DS
DS
= 3 A
= 350 mA
= 0 V
= 25 V
= 12.5 V
= 12.5 V
= 12.5 V
OUT
OUT
OUT
= 50 W, f = 870 MHz
= 15 W, f = 870 MHz
= P3dB, f = 870 MHz
f = 870 MHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
20:1
Min
Min
PD85035-E, PD85035S-E
35
15
60
Typ
0.64
Typ
40
17
72
3.9
1.4
76
45
Rating
MSL 3
Class
M3
2
Max
Max
0.7
1
1
VSWR
Unit
Unit
dB
μA
μA
W
pF
pF
pF
%
V
V