PD85035-E STMicroelectronics, PD85035-E Datasheet - Page 7
![TRANS RF POWER LDMOST N-CH](/photos/5/64/56415/pd85035-e_sml.jpg)
PD85035-E
Manufacturer Part Number
PD85035-E
Description
TRANS RF POWER LDMOST N-CH
Manufacturer
STMicroelectronics
Datasheet
1.PD85035-E.pdf
(15 pages)
Specifications of PD85035-E
Transistor Type
LDMOS
Frequency
870MHz
Gain
17dB
Voltage - Rated
40V
Current Rating
8A
Current - Test
350mA
Voltage - Test
13.6V
Power - Output
15W
Package / Case
PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Configuration
Single
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
- 0.5 V to + 15 V
Continuous Drain Current
8 A
Power Dissipation
95 W
Maximum Operating Temperature
+ 165 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
40V
Output Power (max)
40W(Typ)
Power Gain (typ)@vds
17dB
Frequency (max)
1GHz
Package Type
PowerSO
Pin Count
3
Input Capacitance (typ)@vds
76@12.5VpF
Output Capacitance (typ)@vds
45@12.5VpF
Reverse Capacitance (typ)
1.4@12.5VpF
Operating Temp Range
-65C to 165C
Drain Efficiency (typ)
72%
Mounting
Surface Mount
Number Of Elements
1
Power Dissipation (max)
95000mW
Vswr (max)
20(Min)
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Details
Other names
497-8299
497-8299-5
497-8299
PD85035-E
497-8299-5
497-8299
PD85035-E
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PD85035-E
Manufacturer:
ST
Quantity:
20 000
PD85035-E, PD85035S-E
Figure 7.
Figure 9.
20
18
16
14
12
10
22
20
18
16
14
12
10
8
6
4
2
0
0
0
Idq = 150mA
1
10
Pout and Id vs V
Gain vs Pout and bias current
Pout
Freq = 870 MHz
2
Pin = 200mW
Vdd = 13.6V
20
Idq = 350mA
Vgs (V)
Id
Pout (W)
3
Freq = 870 MHz
30
Vdd = 13.6V
GS
4
40
Idq = 500mA
5
50
6
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
60
Figure 8.
Figure 10. Gain and efficiency vs Pout
20
19
18
17
16
15
14
13
12
11
10
30
25
20
15
10
5
0
0
0
5
Freq = 870 MHz
Gain
Pin = 400mW
Vdd = 13.6V
Pout and Id vs V
1
Pout
10
Freq = 870 MHz
15
Eff
Idq = 350mA
Vdd = 13.6V
2
20
Id
Pout (W)
Vgs (V)
25
3
30
Typical performance
GS
4
35
40
5
45
50
6
6
5
4
3
2
1
0
100
90
80
70
60
50
40
30
20
10
0
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