NE3510M04-A CEL, NE3510M04-A Datasheet - Page 10

• Manufacturer Part Number: NE3510M04-A
• Description: HJ-FET N-CH 4GHZ M04
• Manufacturer: CEL

Specifications of NE3510M04-A

• Transistor Type: HFET
• Frequency: 4GHz
• Gain: 16dB
• Voltage - Rated: 4V
• Current Rating: 97mA
• Noise Figure: 0.45dB
• Current - Test: 15mA
• Voltage - Test: 2V
• Power - Output: 11dBm
• Package / Case: M04
• Gate-source Cutoff Voltage: - 0.7 V
• Mounting Style: SMD/SMT
• Forward Transconductance Gfs (max / Min): 70 mS
• Gate-source Breakdown Voltage: - 3 V
• Continuous Drain Current: 15 mA
• Power Dissipation: 125 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Caution
GaAs Products
This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth.
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
2. Exclude the product from general industrial waste and household garbage, and ensure that the
materials that contain arsenic and other such industrial waste materials.
product is controlled (as industrial waste subject to special control) up until final disposal.
NE3510M04