NE3510M04-A CEL, NE3510M04-A Datasheet - Page 2

• Manufacturer Part Number: NE3510M04-A
• Description: HJ-FET N-CH 4GHZ M04
• Manufacturer: CEL

Specifications of NE3510M04-A

• Transistor Type: HFET
• Frequency: 4GHz
• Gain: 16dB
• Voltage - Rated: 4V
• Current Rating: 97mA
• Noise Figure: 0.45dB
• Current - Test: 15mA
• Voltage - Test: 2V
• Power - Output: 11dBm
• Package / Case: M04
• Gate-source Cutoff Voltage: - 0.7 V
• Mounting Style: SMD/SMT
• Forward Transconductance Gfs (max / Min): 70 mS
• Gate-source Breakdown Voltage: - 3 V
• Continuous Drain Current: 15 mA
• Power Dissipation: 125 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

RECOMMENDED OPERATING CONDITIONS (T
ELECTRICAL CHARACTERISTICS (T
2
Drain to Source Voltage
D
n I
Gate to Source Leak Current
Saturated Drain Current
Gate to Source Cutoff Voltage
T
N
A
Gain 1 dB Compression
O
a r
a r
o
s s
u
p
s i
p t
t u
n
n i
o
c s
e
c
t u
P
C
a i
F
o
o
P
r u
g i
e t
n
w
o
d
e r
u
d
r e
w
u
e r
t n
G
r e
c
a t
a
Parameter
Parameter
n i
n
c
e
Symbol
Symbol
P
V
O (1 dB)
V
I
I
GS (off)
N
P
GSO
g
G
DSS
I
DS
D
m
in
F
a
A
V
V
V
V
V
V
f
Data Sheet PG10676EJ01V0DS
= +25 C, unless otherwise specified)
=
GS
DS
DS
DS
DS
DS
MIN.
4
= 3 V
= 2 V, V
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
G
H
z
D
D
D
D
Test Conditions
TYP.
GS
A
= 100 A
= 15 mA
= 15 mA, f = 4 GHz
= 15 mA (Non-RF),
15
2
= +25 C)
=
0
V
MAX.
30
3
0
dBm
Unit
mA
V
MIN.
1
0.35
4
70
4
2
5 .
TYP.
0.45
+11
0.5
7
1
0.7
0
6
MAX.
0.65
1.10
NE3510M04
10
9
7
dBm
Unit
m
mS
dB
dB
V
A
A