NE3510M04-A CEL, NE3510M04-A Datasheet - Page 8

• Manufacturer Part Number: NE3510M04-A
• Description: HJ-FET N-CH 4GHZ M04
• Manufacturer: CEL

Specifications of NE3510M04-A

• Transistor Type: HFET
• Frequency: 4GHz
• Gain: 16dB
• Voltage - Rated: 4V
• Current Rating: 97mA
• Noise Figure: 0.45dB
• Current - Test: 15mA
• Voltage - Test: 2V
• Power - Output: 11dBm
• Package / Case: M04
• Gate-source Cutoff Voltage: - 0.7 V
• Mounting Style: SMD/SMT
• Forward Transconductance Gfs (max / Min): 70 mS
• Gate-source Breakdown Voltage: - 3 V
• Continuous Drain Current: 15 mA
• Power Dissipation: 125 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

RECOMMENDED SOLDERING CONDITIONS
methods and conditions other than those recommended below, contact your nearby sales office.
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Infrared Reflow
Partial Heating
Caution Do not use different soldering methods together (except for partial heating).
This product should be soldered and mounted under the following recommended conditions.
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Peak temperature (package surface temperature)
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Time at temperature of 220 C or higher
Preheating time at 120 to 180
Maximum number of reflow processes
Maximum chlorine content of rosin flux (% mass)
Peak temperature (terminal temperature)
Soldering time (per side of device)
Maximum chlorine content of rosin flux (% mass)
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Data Sheet PG10676EJ01V0DS
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: 260 C or below
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: 60 seconds or less
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: 3 times
: 0.2%(Wt.) or below
: 350 C or below
: 3 seconds or less
: 0.2%(Wt.) or below
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30 seconds
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NE3510M04
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HS350
IR260
For soldering
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