NE3510M04-A CEL, NE3510M04-A Datasheet - Page 4

• Manufacturer Part Number: NE3510M04-A
• Description: HJ-FET N-CH 4GHZ M04
• Manufacturer: CEL

Specifications of NE3510M04-A

• Transistor Type: HFET
• Frequency: 4GHz
• Gain: 16dB
• Voltage - Rated: 4V
• Current Rating: 97mA
• Noise Figure: 0.45dB
• Current - Test: 15mA
• Voltage - Test: 2V
• Power - Output: 11dBm
• Package / Case: M04
• Gate-source Cutoff Voltage: - 0.7 V
• Mounting Style: SMD/SMT
• Forward Transconductance Gfs (max / Min): 70 mS
• Gate-source Breakdown Voltage: - 3 V
• Continuous Drain Current: 15 mA
• Power Dissipation: 125 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

4
Remark The graphs indicate nominal characteristics.
–10
–10
–20
–30
–40
–50
–60
–70
20
15
10
–5
30
20
10
–20
–
5
0
0
4
0
f = 4 GHz,
I
D
f = 4 GHz,
I
D
= 15 mA set (Non-RF)
= 15 mA set (Non-RF)
OUTPUT POWER, GAIN, DRAIN CURRENT,
GATE CURRENT vs. INPUT POWER
–
OUTPUT POWER, IM
vs. INPUT POWER
1
5
–
V
3
V
DS
0
DS
=
P
=
out (1 tone)
2 V
–
2 V
1
0
Input Power P
Input Power P
Data Sheet PG10676EJ01V0DS
–
2
–
0
5
P
IM
out
Gain
3 (L)
I
in (1 tone)
3,
in (1 tone)
D
DRAIN CURRENT
0
–10
(dBm)
(dBm)
OIP
I
D
3
5
= +20 dBm
I
G
IM
IIP
0
3 (H)
3
1
= +4 dBm
0
1
1
5
0
50
45
40
35
30
25
20
15
10
5
0
60
50
40
30
20
10
0
NE3510M04