NE3510M04-A CEL, NE3510M04-A Datasheet - Page 3

• Manufacturer Part Number: NE3510M04-A
• Description: HJ-FET N-CH 4GHZ M04
• Manufacturer: CEL

Specifications of NE3510M04-A

• Transistor Type: HFET
• Frequency: 4GHz
• Gain: 16dB
• Voltage - Rated: 4V
• Current Rating: 97mA
• Noise Figure: 0.45dB
• Current - Test: 15mA
• Voltage - Test: 2V
• Power - Output: 11dBm
• Package / Case: M04
• Gate-source Cutoff Voltage: - 0.7 V
• Mounting Style: SMD/SMT
• Forward Transconductance Gfs (max / Min): 70 mS
• Gate-source Breakdown Voltage: - 3 V
• Continuous Drain Current: 15 mA
• Power Dissipation: 125 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS (T
Remark The graphs indicate nominal characteristics.
250
200
150
100
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs. DRAIN CURRENT
50
0
MINIMUM NOISE FIGURE,
0
ASSOCIATED GAIN vs. FREQUENCY
0
f = 2.0 GHz
V
DS
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
= 2 V
5
NF
50
Ambient Temperature T
min
G
10
Drain Current I
a
Frequency f (GHz)
5
Mounted on Glass Epoxy PCB
(1.08 cm
100
15
NF
min
G
2
a
20
150
D
1.0 mm (t) )
(mA)
10
25
A
( C)
V
I
200
A
D
DS
= 15 mA
= +25 C, unless otherwise specified)
30
= 2 V
Data Sheet PG10676EJ01V0DS
250
15
35
24
22
20
18
16
14
12
10
8
6
4
2
0
24
22
20
18
16
14
12
10
8
6
4
2
0
100
100
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs. DRAIN CURRENT
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
–1.0
0
0
0
0
V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
DS
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
5
= 2 V
–0.8
Drain to Source Voltage V
Gate to Source Voltage V
1
10
Drain Current I
–0.6
2
15
NF
G
a
min
–0.4
20
3
D
(mA)
25
GS
DS
f = 4.0 GHz
V
–0.2
V
(V)
DS
(V)
NE3510M04
4
GS
–0.1 V
–0.2 V
–0.4 V
–0.5 V
–0.6 V
–0.7 V
–0.3 V
= 2 V
30
= 0 V
35
0
5
24
22
20
18
16
14
12
10
8
6
4
2
0
3