PD85015-E STMicroelectronics, PD85015-E Datasheet - Page 3
![TRANS RF POWER LDMOST N-CH](/photos/5/64/56453/pd85015-e_sml.jpg)
PD85015-E
Manufacturer Part Number
PD85015-E
Description
TRANS RF POWER LDMOST N-CH
Manufacturer
STMicroelectronics
Datasheet
1.PD85015TR-E.pdf
(13 pages)
Specifications of PD85015-E
Transistor Type
LDMOS
Frequency
870MHz
Gain
16dB
Voltage - Rated
40V
Current Rating
5A
Current - Test
150mA
Voltage - Test
13.6V
Power - Output
15W
Package / Case
PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Channel Type
N
Channel Mode
Enhancement
Continuous Drain Current
5A
Drain Source Voltage (max)
40V
Output Power (max)
20W
Power Gain (typ)@vds
16(Min)dB
Frequency (max)
1GHz
Package Type
PowerSO-10RF (Formed lead)
Pin Count
3
Input Capacitance (typ)@vds
45@12.5VpF
Output Capacitance (typ)@vds
36@12.5VpF
Reverse Capacitance (typ)
1.2@12.5VpF
Operating Temp Range
-65C to 165C
Drain Efficiency (typ)
70%
Mounting
Surface Mount
Number Of Elements
1
Power Dissipation (max)
59000mW
Vswr (max)
20(Min)
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Other names
497-8296
497-8296-5
497-8296
PD85015-E
497-8296-5
497-8296
PD85015-E
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PD85015-E
Manufacturer:
STMicroelectronics
Quantity:
135
Part Number:
PD85015-E
Manufacturer:
ST
Quantity:
20 000
STAP85015-E STAP85015S-E
1
1.1
1.2
Electrical data
Maximum ratings
Table 2.
Thermal data
Table 3.
V
Symbol
Symbol
(BR)DSS
P
T
R
V
DISS
T
STG
I
thJC
GS
D
J
Absolute maximum ratings (T
Thermal data
Drain-source voltage
Gate-source voltage
Drain current
Power dissipation (@ T
Max. operating junction temperature
Storage temperature
Junction - case thermal resistance
Doc ID 14466 Rev 2
Parameter
Parameter
C
= 70 °C)
CASE
= 25 °C)
-65 to +150
-0.5 to +15
Value
Value
165
1.6
40
59
5
Electrical data
°C/W
Unit
Unit
°C
°C
W
V
V
A
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