PD85015-E STMicroelectronics, PD85015-E Datasheet - Page 5

• Manufacturer Part Number: PD85015-E
• Description: TRANS RF POWER LDMOST N-CH
• Manufacturer: STMicroelectronics

Specifications of PD85015-E

• Transistor Type: LDMOS
• Frequency: 870MHz
• Gain: 16dB
• Voltage - Rated: 40V
• Current Rating: 5A
• Current - Test: 150mA
• Voltage - Test: 13.6V
• Power - Output: 15W
• Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 5A
• Drain Source Voltage (max): 40V
• Output Power (max): 20W
• Power Gain (typ)@vds: 16(Min)dB
• Frequency (max): 1GHz
• Package Type: PowerSO-10RF (Formed lead)
• Pin Count: 3
• Input Capacitance (typ)@vds: 45@12.5VpF
• Output Capacitance (typ)@vds: 36@12.5VpF
• Reverse Capacitance (typ): 1.2@12.5VpF
• Operating Temp Range: -65C to 165C
• Drain Efficiency (typ): 70%
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 59000mW
• Vswr (max): 20(Min)
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 497-8296; 497-8296-5; 497-8296; PD85015-E

STAP85015-E STAP85015S-E
3
Impedance
Figure 2.
Table 7.
Frequency (MHz)
870 MHz
Current conventions
Impedance data
Doc ID 14466 Rev 2
Z
TBD
IN
(Ω)
Z
TBD
DL
(Ω)
Impedance
5/13