BF1214,115 NXP Semiconductors, BF1214,115 Datasheet - Page 13

• Manufacturer Part Number: BF1214,115
• Description: MOSFET N-CH DUAL GATE 6V UMT6
• Manufacturer: NXP Semiconductors

Specifications of BF1214,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: N-Channel Dual Gate
• Frequency: 400MHz
• Gain: 31dB
• Voltage - Rated: 6V
• Current Rating: 30mA
• Noise Figure: 0.9dB
• Current - Test: 18mA
• Voltage - Test: 5V
• Configuration: Dual
• Continuous Drain Current: 30 mA
• Drain-source Breakdown Voltage: 6 V
• Gate-source Breakdown Voltage: 6 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 6V
• Power Gain (typ)@vds: 35@5VdB
• Noise Figure (max): 1.8dB
• Package Type: SOT-363
• Pin Count: 6
• Input Capacitance (typ)@vds: 2.2@5V@Gate 1/3.5@5V@Gate 2pF
• Output Capacitance (typ)@vds: 0.8@5VpF
• Reverse Capacitance (typ): 0.02@5VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 2
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934061308115; BF1214 T/R; BF1214 T/R

NXP Semiconductors
BF1214_1
Product data sheet
Fig 20. Amplifier B: input admittance as a function of
Fig 22. Amplifier B: reverse transfer admittance and
b
(mS)
is
( S)
|y
, g
10
10
rs
10
10
10
10
|
10
is
1
1
2
1
2
3
2
V
I
frequency; typical values
V
I
phase as a function of frequency; typical values
10
D(B)
10
D(B)
DS(B)
DS(B)
= 18 mA.
= 18 mA.
= 5 V; V
= 5 V; V
G2-S
G2-S
= 4 V; V
= 4 V; V
10
10
2
2
|y
b
g
DS(A)
rs
rs
DS(A)
is
is
|
f (MHz)
f (MHz)
= 0 V;
= 0 V;
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Rev. 01 — 30 October 2007
10
10
3
3
10
(deg)
10
10
1
3
rs
2
Fig 21. Amplifier B: forward transfer admittance and
Fig 23. Amplifier B: output admittance as a function of
b
os
(mS)
(mS)
|y
10
10
, g
fs
10
|
10
10
os
1
1
2
1
2
V
I
phase as a function of frequency; typical values
V
I
frequency; typical values
10
10
D(B)
D(B)
DS(B)
DS(B)
= 18 mA.
= 18 mA.
= 5 V; V
= 5 V; V
Dual N-channel dual gate MOSFET
G2-S
G2-S
= 4 V; V
= 4 V; V
10
10
2
2
|y
b
g
DS(A)
os
os
DS(A)
fs
fs
|
f (MHz)
f (MHz)
= 0 V;
= 0 V;
© NXP B.V. 2007. All rights reserved.
001aah012
001aah014
BF1214
10
10
3
3
10
(deg)
10
1
13 of 18
2
fs