BF1214,115 NXP Semiconductors, BF1214,115 Datasheet - Page 2

• Manufacturer Part Number: BF1214,115
• Description: MOSFET N-CH DUAL GATE 6V UMT6
• Manufacturer: NXP Semiconductors

Specifications of BF1214,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: N-Channel Dual Gate
• Frequency: 400MHz
• Gain: 31dB
• Voltage - Rated: 6V
• Current Rating: 30mA
• Noise Figure: 0.9dB
• Current - Test: 18mA
• Voltage - Test: 5V
• Configuration: Dual
• Continuous Drain Current: 30 mA
• Drain-source Breakdown Voltage: 6 V
• Gate-source Breakdown Voltage: 6 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 6V
• Power Gain (typ)@vds: 35@5VdB
• Noise Figure (max): 1.8dB
• Package Type: SOT-363
• Pin Count: 6
• Input Capacitance (typ)@vds: 2.2@5V@Gate 1/3.5@5V@Gate 2pF
• Output Capacitance (typ)@vds: 0.8@5VpF
• Reverse Capacitance (typ): 0.02@5VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 2
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934061308115; BF1214 T/R; BF1214 T/R

NXP Semiconductors
2. Pinning information
3. Ordering information
BF1214_1
Product data sheet
1.4 Quick reference data
Table 1.
[1]
[2]
[3]
Table 2.
Table 3.
Symbol Parameter
V
I
P
C
C
NF
Xmod
T
Pin
1
2
3
4
5
6
Type number
BF1214
y
D
j
DS
tot
fs
iss(G1)
rss
T
Calculated from S-parameters.
Measured in
sp
is the temperature at the soldering point of the source lead.
drain-source voltage
drain current
total power dissipation
forward transfer admittance
input capacitance at gate1
reverse transfer capacitance f = 100 MHz
noise figure
cross modulation
junction temperature
Quick reference data for amplifier A and B
Discrete pinning
Ordering information
Description
drain (AMP A)
source
drain (AMP B)
gate1 (AMP B)
gate2
gate1 (AMP A)
Figure 24
Package
Name
-
Rev. 01 — 30 October 2007
test circuit.
Description
plastic surface-mounted package; 6 leads
Conditions
DC
DC
T
f = 100 MHz; T
I
f = 100 MHz
f = 400 MHz; Y
f = 800 MHz; Y
input level for k = 1 % at
40 dB AGC; f
f
D
unw
sp
= 18 mA
= 60 MHz
107 C
w
Simplified outline
j
S
S
= 50 MHz;
= 25 C;
= Y
= Y
Dual N-channel dual gate MOSFET
S(opt)
S(opt)
1
6
5
2
[3]
[1]
[2]
[2]
3
4
Min
-
-
-
27
-
-
-
-
102
-
Symbol
© NXP B.V. 2007. All rights reserved.
G1A
G1B
Typ
-
-
-
32
2.2
20
0.9
1.2
105
-
G2
BF1214
AMP A
AMP B
Max Unit
6
30
180
37
2.7
-
1.5
1.8
-
150
Version
SOT363
sym119
V
mA
mW
mS
pF
fF
dB
dB
dB V
2 of 18
C
DA
S
DB