BF1100R,215 NXP Semiconductors, BF1100R,215 Datasheet - Page 13

• Manufacturer Part Number: BF1100R,215
• Description: MOSFET N-CH 14V 30MA SOT143R
• Manufacturer: NXP Semiconductors

Specifications of BF1100R,215

• Package / Case: SOT-143R
• Current Rating: 30mA
• Frequency: 800MHz
• Transistor Type: N-Channel Dual Gate
• Noise Figure: 2dB
• Current - Test: 10mA
• Voltage - Test: 9V
• Configuration: Dual
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 14 V
• Gate-source Breakdown Voltage: 13.2 V
• Continuous Drain Current: 0.03 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934036560215::BF1100R T/R::BF1100R T/R

NXP Semiconductors
PACKAGE OUTLINES
handbook, full pagewidth
handbook, full pagewidth
Dual-gate MOS-FETs
Dimensions in mm.
Dimensions in mm.
max
10
0.40
0.25
max
10
o
o
0.75
0.60
max
1.1
max
1.1
max
30
max
30
0.150
0.090
o
max
0.150
0.090
0.1
max
o
10
max
0.1
max
10
o
o
Rev. 02 - 13 November 2007
Fig.29 SOT143R.
Fig.28 SOT143.
0.88
0.48
0.38
0.1
4
0
0.1
TOP VIEW
2
3
M
1
3.0
2.8
1.9
TOP VIEW
1.7
1.7
B
3.0
2.8
1.9
1
3
2
0.48
4
0.88
0.78
0
0.1
0.1
A
B
1.4
1.2
A
B
1.4
1.2
M
MBC844
max
A B
2.5
max
2.5
BF1100; BF1100R
0.2
MBC845
0.2
M
M
A B
A
Product specification
13 of 15