BF1100R,215 NXP Semiconductors, BF1100R,215 Datasheet - Page 2

MOSFET N-CH 14V 30MA SOT143R

BF1100R,215

Manufacturer Part Number
BF1100R,215
Description
MOSFET N-CH 14V 30MA SOT143R
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BF1100R,215

Package / Case
SOT-143R
Current Rating
30mA
Frequency
800MHz
Transistor Type
N-Channel Dual Gate
Noise Figure
2dB
Current - Test
10mA
Voltage - Test
9V
Configuration
Dual
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
14 V
Gate-source Breakdown Voltage
13.2 V
Continuous Drain Current
0.03 A
Power Dissipation
200 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Gain
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934036560215::BF1100R T/R::BF1100R T/R
NXP Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
Enhancement type field-effect transistor in a plastic
microminiature SOT143 or SOT143R package. The
transistor consists of an amplifier MOS-FET with source
QUICK REFERENCE DATA
V
I
P
T
C
C
F
handbook, halfpage
D
y
Specially designed for use at 9 to 12 V supply voltage
Short channel transistor with high forward transfer
admittance to input capacitance ratio
Low noise gain controlled amplifier up to 1 GHz
Superior cross-modulation performance during AGC.
VHF and UHF applications such as television tuners and
professional communications equipment.
j
DS
tot
ig1-s
rs
Dual-gate MOS-FETs
BF1100 marking code: %MY.
SYMBOL
fs
Top view
Fig.1 Simplified outline (SOT143) and symbol.
4
1
drain-source voltage
drain current
total power dissipation
operating junction temperature
forward transfer admittance
input capacitance at gate 1
reverse transfer capacitance
noise figure
3
2
MAM124
PARAMETER
g 2
g 1
d
Rev. 02 - 13 November 2007
s,b
f = 1 MHz
f = 800 MHz
and substrate interconnected and an internal bias circuit to
ensure good cross-modulation performance during AGC.
PINNING
handbook, halfpage
CONDITIONS
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
BF1100R marking code: %MZ.
Top view
PIN
Fig.2 Simplified outline (SOT143R) and symbol.
1
2
3
4
3
2
SYMBOL
1
s, b
g
g
d
4
2
1
24
MAM125 - 1
MIN.
CAUTION
source
drain
gate 2
gate 1
BF1100; BF1100R
28
2.2
25
2
TYP.
DESCRIPTION
Product specification
g
g 1
2
14
30
200
150
33
2.6
35
MAX.
d
2 of 15
V
mA
mW
mS
pF
fF
dB
C
UNIT
s,b

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