BF1207,115 NXP Semiconductors, BF1207,115 Datasheet
BF1207,115
Specifications of BF1207,115
BF1207 T/R
BF1207 T/R
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BF1207,115 Summary of contents
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BF1207 Dual N-channel dual gate MOSFET Rev. 01 — 28 July 2005 1. Product profile 1.1 General description The BF1207 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The ...
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Philips Semiconductors 1.4 Quick reference data Table 1: Per MOSFET unless otherwise specified. Symbol Parameter tot iss(G1) C rss NF Xmod Pinning information Table 2: Pin ...
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Philips Semiconductors 3. Ordering information Table 3: Type number BF1207 4. Marking Table 4: Type number BF1207 [ Made in Hong Kong Made in Malaysia Made in China. 5. Limiting values ...
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Philips Semiconductors Fig 1. Power derating curve 6. Thermal characteristics Table 6: Symbol R th(j-sp) 7. Static characteristics Table 7: Static characteristics Symbol Parameter Per MOSFET; unless otherwise specified V drain-source breakdown voltage (BR)DSS V ...
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Philips Semiconductors Table 7: Static characteristics Symbol Parameter I gate1 cut-off current G1-S I gate2 cut-off current G2-S [1] R connects gate1 ( (see G1 GG [2] R connects gate1 ...
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Philips Semiconductors 8. Dynamic characteristics 8.1 Dynamic characteristics for amplifier A Table 8: Dynamic characteristics for amplifier A Common source amb Symbol Parameter y forward transfer admittance fs C input capacitance at gate1 iss(G1) C ...
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Philips Semiconductors 8.1.1 Graphs for amplifi (mA 0.4 0.8 ( G2-S ( 3.5 V. G2-S ( G2-S (4) ...
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Philips Semiconductors (mS (5) ( G2-S ( 3.5 V. G2-S ( G2-S ( 2.5 V. G2-S ...
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Philips Semiconductors 120 V unw (dB V) 110 100 DS(A) DS(B) G1-S( MHz see unw amb Fig 9. Amplifier A: unwanted ...
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Philips Semiconductors (mS DS(A) G2 mA. D(A) Fig 12. Amplifier ...
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Philips Semiconductors 8.1.2 Scattering parameters for amplifier A Table DS(A) f (MHz) 50 100 200 300 400 500 600 700 800 900 1000 9397 750 14955 Product data sheet Scattering parameters for amplifier A ...
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Philips Semiconductors 8.2 Dynamic characteristics for amplifier B Table 10: Dynamic characteristics for amplifier B Common source amb Symbol Parameter y forward transfer admittance fs C input capacitance at gate1 iss(G1) C input capacitance at ...
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Philips Semiconductors 8.2.1 Graphs for amplifi (mA 0.4 0.8 ( G2-S ( 3.5 V. G2-S ( G2-S ( 2.5 V. ...
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Philips Semiconductors (mS (5) ( G2-S ( 3.5 V. G2-S ( G2-S ( 2.5 V. G2-S ...
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Philips Semiconductors 120 V unw (dB V) 110 100 DS(B) GG DS( 150 k (connected to V G1( MHz ...
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Philips Semiconductors (mS DS(B) G2 mA. D(B) Fig ...
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Philips Semiconductors 8.2.2 Scattering parameters for amplifier B Table 11 DS(B) f (MHz) 50 100 200 300 400 500 600 700 800 900 1000 9397 750 14955 Product data sheet Scattering parameters for amplifier B ...
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Philips Semiconductors 9. Test information R GEN Fig 29. Cross-modulation test set-up for amplifi GEN 50 Fig 30. Cross-modulation test set-up for amplifier B 9397 750 14955 Product data sheet V AGC 10 k 4.7 nF G1B 4.7 ...
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Philips Semiconductors 10. Package outline Plastic surface mounted package; 6 leads y 6 pin 1 index DIMENSIONS (mm are the original dimensions UNIT max 0.30 1.1 0.25 mm 0.1 0.20 0.8 0.10 ...
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Philips Semiconductors 11. Revision history Table 12: Revision history Document ID Release date BF1207_1 20050728 9397 750 14955 Product data sheet Data sheet status Change notice Product data sheet - Rev. 01 — 28 July 2005 BF1207 Dual N-channel dual ...
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Philips Semiconductors 12. Data sheet status [1] Level Data sheet status Product status I Objective data Development II Preliminary data Qualification III Product data Production [1] Please consult the most recently issued data sheet before initiating or completing a design. ...
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Philips Semiconductors 17. Contents 1 Product profi 1.1 General description ...