BF1207,115 NXP Semiconductors, BF1207,115 Datasheet - Page 17

MOSFET N-CH DUAL GATE 6V UMT6

BF1207,115

Manufacturer Part Number
BF1207,115
Description
MOSFET N-CH DUAL GATE 6V UMT6
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BF1207,115

Package / Case
SC-70-6, SC-88, SOT-363
Transistor Type
N-Channel Dual Gate
Frequency
400MHz
Gain
30dB
Voltage - Rated
6V
Current Rating
30mA
Noise Figure
1.3dB
Current - Test
18mA
Voltage - Test
5V
Configuration
Dual Dual Gate
Continuous Drain Current
30 mA
Drain-source Breakdown Voltage
6 V
Gate-source Breakdown Voltage
6 V
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Power Dissipation
180 mW
Transistor Polarity
N-Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934058936115
BF1207 T/R
BF1207 T/R
Philips Semiconductors
9397 750 14955
Product data sheet
8.2.2 Scattering parameters for amplifier B
Table 11:
V
f
(MHz)
50
100
200
300
400
500
600
700
800
900
1000
DS(B)
= 5 V; V
s
Magnitude
(ratio)
0.993
0.992
0.987
0.979
0.969
0.957
0.943
0.927
0.907
0.885
0.858
11
Scattering parameters for amplifier B
G2-S
= 4 V; I
Angle
(deg)
3.018 3.07
6.186 3.07
12.43 3.09
18.60 3.02
24.62 2.99
30.72 2.95
36.71 2.90
42.77 2.86
48.91 2.79
54.77 2.736
61.01 2.675
Rev. 01 — 28 July 2005
D(B)
= 14 mA; V
s
Magnitude
(ratio)
21
DS(A)
Angle
(deg)
176.04 0.0004
172.05 0.0011
164.13 0.0024
156.28 0.0036
148.48 0.0046
140.69 0.0056
132.87 0.0065
125.21 0.0074
117.22 0.0082
109.29 0.0086
101.18 0.0092
= 0 V; V
s
Magnitude
(ratio)
G1-S(A)
12
Dual N-channel dual gate MOSFET
= 0 V; T
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Angle
(deg)
95.97
90.33
85.03
82.94
81.97
81.03
79.77
79.04
79.42
75.47
73.48
amb
= 25 C; typical values.
s
Magnitude
(ratio)
0.991
0.990
0.988
0.986
0.983
0.980
0.977
0.973
0.969
0.964
0.958
22
BF1207
Angle
(deg)
17 of 22
1.39
2.79
5.49
8.21
10.91
13.63
16.40
19.13
21.93
24.85
27.75

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