ATF-551M4-TR2 Avago Technologies US Inc., ATF-551M4-TR2 Datasheet - Page 11
![IC PHEMT 2GHZ 2.7V 10MA MINIPAK](/photos/19/9/190988/3792038_sml.jpg)
ATF-551M4-TR2
Manufacturer Part Number
ATF-551M4-TR2
Description
IC PHEMT 2GHZ 2.7V 10MA MINIPAK
Manufacturer
Avago Technologies US Inc.
Datasheet
1.ATF-551M4-TR2.pdf
(23 pages)
Specifications of ATF-551M4-TR2
Gain
17.5dB
Mfg Application Notes
ATF-541M4 AppNote
Transistor Type
pHEMT FET
Frequency
2GHz
Voltage - Rated
5V
Current Rating
100mA
Noise Figure
0.5dB
Current - Test
10mA
Voltage - Test
2.7V
Power - Output
14.6dBm
Package / Case
4-MiniPak (1412)
Drain Source Voltage Vds
2.7V
Continuous Drain Current Id
100mA
Power Dissipation Pd
270mW
Noise Figure Typ
0.5dB
Rf Transistor Case
MiniPak
No. Of Pins
4
Frequency Max
10GHz
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ATF-551M4-TR2
Manufacturer:
AVAGO
Quantity:
100 000
Part Number:
ATF-551M4-TR2
Manufacturer:
AVAGO/安华高
Quantity:
20 000
ATF-551M4 Typical Scattering Parameters, V
Freq.
GHz
0.1
0.5
0.9
1.0
1.5
1.9
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
Typical Noise Parameters, V
Freq
GHz
0.5
0.9
1.0
1.9
2.0
2.4
3.0
3.9
5.0
5.8
6.0
7.0
8.0
9.0
10.0
Notes:
1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From
2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at
11
these measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
the end of the gate pad. The output reference plane is at the end of the drain pad.
Mag.
0.995
0.955
0.907
0.896
0.833
0.789
0.779
0.737
0.707
0.679
0.674
0.675
0.676
0.679
0.686
0.684
0.688
0.693
0.710
0.743
0.760
0.805
0.830
0.872
F
dB
0.26
0.27
0.30
0.46
0.41
0.47
0.55
0.61
0.74
0.88
0.90
1.00
1.12
1.25
1.46
min
S
11
Ang.
-5.9
-28.7
-50.0
-55.0
-78.6
-95.5
-99.4
-117.4
-133.4
-159.1
-178.9
167.3
154.9
144.5
133.5
120.8
107.5
93.7
82.7
68.6
56.5
46.2
38.1
31.5
Γ
Mag.
0.64
0.57
0.54
0.49
0.48
0.44
0.36
0.32
0.32
0.35
0.35
0.37
0.41
0.46
0.46
opt
DS
= 2.V, I
Γ
Ang.
-4.4
7.5
11.1
36.6
40.4
50.3
69.5
101.3
139.5
161.5
163.9
-173.6
-158.2
-143.0
-127.2
opt
dB
20.55
20.11
19.52
19.36
18.34
17.43
17.21
16.07
14.98
13.01
11.30
9.93
8.72
7.73
6.84
6.03
5.30
4.59
3.86
3.19
2.37
1.42
0.43
-0.58
DS
= 10 mA
DS
R
0.14
0.13
0.13
0.11
0.12
0.11
0.10
0.08
0.06
0.05
0.05
0.06
0.07
0.09
0.15
n/50
= 2.V, I
Mag.
10.656
10.129
9.466
9.292
8.265
7.439
7.255
6.361
5.610
4.471
3.673
3.136
2.728
2.435
2.198
2.002
1.841
1.696
1.559
1.443
1.314
1.177
1.051
0.935
S
21
DS
G
dB
23.79
21.80
21.60
18.06
17.92
16.79
15.70
14.24
12.86
12.01
11.82
10.93
10.24
9.66
8.85
= 10 mA
Ang.
175.9
158.4
144.6
141.4
126.1
115.4
113.0
101.7
91.8
75.0
60.8
49.1
37.7
27.0
16.2
5.1
-5.9
-17.2
-28.2
-39.8
-51.5
-62.2
-72.8
-83.1
a
Figure 29. MSG/MAG and |S
Frequency at 2.7V, 10 mA.
Mag.
0.006
0.028
0.046
0.050
0.067
0.076
0.078
0.085
0.089
0.093
0.094
0.095
0.096
0.099
0.102
0.107
0.113
0.121
0.129
0.139
0.147
0.153
0.158
0.163
-10
40
30
20
10
0
0
S
12
MSG
Ang.
86.3
72.0
61.3
58.8
47.6
40.0
38.4
31.0
25.1
16.6
10.9
8.1
5.9
4.3
2.9
0.7
-1.7
-5.2
-8.9
-14.3
-20.2
-26.2
-32.5
-39.1
5
|S
FREQUENCY (GHz)
21
|
2
10
MAG
Mag.
0.825
0.782
0.735
0.717
0.639
0.577
0.562
0.495
0.439
0.357
0.303
0.264
0.244
0.230
0.222
0.222
0.230
0.239
0.232
0.222
0.232
0.251
0.293
0.353
21
15
|
S
2
22
vs.
MSG
Ang.
-3.0
-14.0
-24.5
-27.0
-37.6
-44.6
-46.2
-53.1
-58.8
-68.3
-77.6
-83.7
-93.5
-104.1
-116.6
-129.0
-140.8
-151.9
-164.6
176.6
155.6
134.3
112.0
92.7
20
MSG/MAG
dB
32.49
25.58
23.13
22.69
20.91
19.91
19.69
18.74
18.00
16.82
15.92
15.19
14.54
12.94
11.58
10.44
9.69
9.02
8.47
8.42
7.69
8.26
8.07
7.59