BLF6G10S-45,112 NXP Semiconductors, BLF6G10S-45,112 Datasheet - Page 100

• Manufacturer Part Number: BLF6G10S-45,112
• Description: IC BASESTATION DRIVER SOT608B
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10S-45,112

• Package / Case: SOT-608B
• Transistor Type: LDMOS
• Frequency: 922.5MHz
• Gain: 23dB
• Voltage - Rated: 65V
• Current Rating: 13A
• Current - Test: 350mA
• Voltage - Test: 28V
• Power - Output: 1W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: MOSFET Power
• Resistance Drain-source Rds (on): 0.2 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 13 A
• Maximum Operating Temperature: + 225 C
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 1W(Typ)
• Power Gain (typ)@vds: 23@28VdB
• Frequency (min): 920MHz
• Frequency (max): 960MHz
• Package Type: CDFM
• Pin Count: 3
• Forward Transconductance (typ): 5S
• Drain Source Resistance (max): 200(Typ)@6.1Vmohm
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 8%
• Mounting: Surface Mount
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934061036112; BLF6G10S-45; BLF6G10S-45

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Date of release: January 007
Document order number: 997 750 1504
Printed in the USA