BLF6G10S-45,112 NXP Semiconductors, BLF6G10S-45,112 Datasheet - Page 26
![IC BASESTATION DRIVER SOT608B](/photos/5/64/56477/nxp_sot-608b_sml.jpg)
BLF6G10S-45,112
Manufacturer Part Number
BLF6G10S-45,112
Description
IC BASESTATION DRIVER SOT608B
Manufacturer
NXP Semiconductors
Specifications of BLF6G10S-45,112
Package / Case
SOT-608B
Transistor Type
LDMOS
Frequency
922.5MHz
Gain
23dB
Voltage - Rated
65V
Current Rating
13A
Current - Test
350mA
Voltage - Test
28V
Power - Output
1W
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Product Type
MOSFET Power
Resistance Drain-source Rds (on)
0.2 Ohms
Transistor Polarity
N-Channel
Configuration
Single
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
13 V
Continuous Drain Current
13 A
Maximum Operating Temperature
+ 225 C
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Output Power (max)
1W(Typ)
Power Gain (typ)@vds
23@28VdB
Frequency (min)
920MHz
Frequency (max)
960MHz
Package Type
CDFM
Pin Count
3
Forward Transconductance (typ)
5S
Drain Source Resistance (max)
200(Typ)@6.1Vmohm
Operating Temp Range
-65C to 225C
Drain Efficiency (typ)
8%
Mounting
Surface Mount
Mode Of Operation
2-Carrier W-CDMA
Number Of Elements
1
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Other names
934061036112
BLF6G10S-45
BLF6G10S-45
BLF6G10S-45
BLF6G10S-45
Audio amplifiers
Class-D audio amplifiers
Class-AB audio amplifiers
6
Product
TDA1517(P)
TDA1517ATW
TDA2614
TDA2615
TDA2616
Product
TDA8920BTH
TDA8920BJ
TDA8922BTH
TDA8922BJ
TDA8931T
TDA8932T
TDA8933T
TFA9810T
Description
2 x 6 W
mini SMD
2x3 W
6 W HIFI
2 x 6 W
HIFI
2 x 12 W
HIFI
Description
One chip
2x50..100 W
One chip
2x50..100 W
One chip
2x25..50 W
One chip
2x25..50 W
Pow comp
1x20 W
Dolby
compliant
One-Chip
2x15..25 W
One-Chip
2x10 W
Pow stage
2x10 W
Output
stage
SE
SE/BTL 6.0 - 18
SE
SE
SE
Output
stage
SE/BTL
SE/BTL
SE/BTL
SE/BTL
SE
SE
SE
BTL
Vp (V)
8.5 - 18
15-42
7.5 - 21
7.5 - 21
Vp (V)
±12.5..30
±12.5..30
±12.5..30
±12.5..30
12..34
(OVP 27 V)
10..36
10..36
8..20
Po (W) 10%
THD
2x6 W
(4 Ω,14.4 V)
2x3 W
(8 Ω,14.4 V)
8.5 W
(±12 V, 8 Ω)
8 W
(±12 V, 8 Ω)
15 W
(±16 V, 8 Ω)
Po (W) 10% THD
2x90 (4 Ω, ±27 V)
2x90 (4 Ω, ±27 V)
2x50 (6 Ω, ±26 V)
2x50 (6 Ω, ±26 V)
1x16 W (4 Ω, 22 V)
1x15 W (8 Ω, 29 V)
2x16 W (4 Ω, 22 V)
2x15 W (8 Ω, 29 V)
2x7 W (4 Ω, 15 V)
2x10 W (8 Ω, 24 V)
2x9 W (8 Ω,12 V)
2x12 W (8 Ω, 14 V)
DC Vol
THD
1 kHz
0.10%
0.10%
0.15%
0.15%
0.15%
THD
1 kHz
0.014%
0.02%
0.02%
0.02%
0.02%
0.01%
0.01%
0.08%
Iq (mA)
@ Vp typ
40
40
20
40
40
Iq (mA)
@ Vp typ
50
50
50
50
22
30
30
35
Gain
(dB)
26/20
20
30
30
30
Gain
(dB)
30/36
30/36
30/36
30/36
20
30
30
20
SVRR
(dB)
>48
>50
45
60
60
SVRR
(dB)
55
55
55
55
55
55
55
45
X-talk
(dB)
>40
>40
70
70
X-talk
(dB)
75
75
75
75
75
80
80
70
DC offset
(mV)
<150
DC offset
(mV)
<150
<150
<150
<150
<20
Vnoise (μV)
(20 - 20 kHz)
50/70
Vnoise (μV)
AES17-brick
50
70
70
70
210
210
210
210
128
100
100
200
Rth j-c
(k/W)
>52
2.5
37
8
6
Rth j-c
(k/W)
1.3
1.3
15
44
44
44
2
2
Mute Package
•
•
•
•
•
Mute
SIL9MPF
HDIP18
HTSSOP20 Inv. phase
SIL9MPF
SIL9MPF
SIL9P
•
•
•
•
•
•
•
Package
HSOP24
SIL23P
HSOP24
SIL23P
SO20L
SO32L
SO32L
SO32L
Continued next page
Remarks
Equal phase
Sym. supply
Sym. supply
Sym. supply
Remarks
Eff=90%
Eff=90%
Eff=90%
Eff=90%
Eff=90%,
Rail-to-rail
Eff=92%
Eff=90%
Eff=90%