BLF6G10LS-135R,112 NXP Semiconductors, BLF6G10LS-135R,112 Datasheet - Page 21

• Manufacturer Part Number: BLF6G10LS-135R,112
• Description: IC BASESTATION FINAL SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10LS-135R,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 871.5MHz
• Gain: 21dB
• Voltage - Rated: 65V
• Current Rating: 32A
• Current - Test: 950mA
• Voltage - Test: 28V
• Power - Output: 26.5W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 32 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 26.5W(Typ)
• Power Gain (typ)@vds: 21@28VdB
• Frequency (min): 869MHz
• Frequency (max): 894MHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 13S
• Drain Source Resistance (max): 100(Typ)@6.15Vmohm
• Reverse Capacitance (typ): 2@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 28%
• Mounting: Surface Mount
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934061247112; BLF6G10LS-135R; BLF6G10LS-135R

1.4.2 Basic TV tuner
Application diagram
Recommended products
V
Function
Function
pre-amplifier
Product highlight: BF1206F dual gate mosfet double
amplifier specified for low power applications
The device consists of two dual gate mosfet amplifiers in a small
SOT666 flatlead package. The BF1206F is a true low power device
specified for low voltage and low currents, intended for use in mobile
applications where power consumption is critical. Performance
is suitable for application at supply voltages of 3 Volts and
draincurrents of 4 mA.
Input filter
RF
cable, active splitter,
From antenna,
Product
Product
RF input
etc.
MOSFET
Varicap
diode
2-in-1 @ 5 V
2-in-1 @ 3 V
VHF high
VHF low
UHF
5 V
SOD323
SOD523
SOD523
SOD882T
SOD882T
SOD323
SOD882T
SOD523
SOD523
Package
SOD323
SOD523
SOD882T
Package
SOT143
SOT143
SOT143
SOT143
SOT143
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT666
SOT666
SOT363
SOT363
SOT363
SOT666
MOSFET
V
AGC
Type
BB152
BB182
BB182LX
BB153
BB178
BB187
BB178LX
BB187LX
BB149A
BB179LX
BB179
BB189
Type
BF1201
BF1202
BF1105
BF1211
BF1212
BF1102R
BF1203
BF1204
BF1205
BF1205C
BF1206
BF1207
BF1208
BF1208D
BF1210
BF1214
BF1218
BF1206F
Features
`
`
`
`
`
Function
Function
Function
pre-amplifier
Bandpass
Oscillator
Low power specified
Two amplifiers in one small SOT666 package
Shared gate 2 and Source leads
Each amplifier is biased by an external bias resistor
Excellent noise and crossmodulation performance
filter
RF
MOPLL
IC
IF
Product
Product
Product
MOSFET
Varicap
Varicap
diode
diode
bra500
NXP Semiconductors RF Manual 14
band switch
2-in-1 @ 5V
2-in-1 with
VHF high
VHF high
VHF low
VHF low
@ 5V
UHF
UHF
5V
Package
SOD323
SOD882T
SOD523
SOD323
SOD882T
SOD523
SOD882T
SOD523
SOD323
SOD882T
SOD523
SOD523
Package
SOD323
SOD882T
SOD523
SOD323
SOD882T
SOD523
SOD882T
SOD523
SOD323
SOD882T
SOD523
SOD523
Package
SOT363
SOT363
SOT343
th
edition
Type
BB152
BB182LX
BB182
BB153
BB178LX
BB178
BB187LX
BB187
BB149A
BB179LX
BB179
BB189
Type
BB152
BB182LX
BB182
BB153
BB178LX
BB178
BB187LX
BB187
BB149A
BB179LX
BB179
BB189
Type
BF1215
BF1216
BF1217
23