BLF6G10LS-135R,112 NXP Semiconductors, BLF6G10LS-135R,112 Datasheet - Page 35

• Manufacturer Part Number: BLF6G10LS-135R,112
• Description: IC BASESTATION FINAL SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10LS-135R,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 871.5MHz
• Gain: 21dB
• Voltage - Rated: 65V
• Current Rating: 32A
• Current - Test: 950mA
• Voltage - Test: 28V
• Power - Output: 26.5W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 32 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 26.5W(Typ)
• Power Gain (typ)@vds: 21@28VdB
• Frequency (min): 869MHz
• Frequency (max): 894MHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 13S
• Drain Source Resistance (max): 100(Typ)@6.15Vmohm
• Reverse Capacitance (typ): 2@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 28%
• Mounting: Surface Mount
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934061247112; BLF6G10LS-135R; BLF6G10LS-135R

1.6.6 RF Plasma Lighting
Application diagram
Recommended products
* = check status at 3.1 new products, as this type has not been released yet for mass production.
Function
Function
MPA (medium
Product highlight:
NXP's 50 V high voltage LDMOS process enables highest power
at unprecedented ruggedness levels necessary for this kind of
application.
BLF578: 1000 W CW operation - highest power LDMOS
amplifier)
power
driver
final
final
final
final
final
final
oscillator
Type
BLF571
BLF573S
BLF574
BLF578
BLF645
BLF 278
BLF 177
Product
MMIC
CONTROLLER
MPA
108 - 225
0 - 1000
0 - 1000
0 - 1000
0 - 1000
0 - 1000
0 - 1300
0 - 1300
28 - 108
SiGe:C MMIC
(MHz)
f
range
MMIC
HPA
1200
1000
300
400
100
100
250
150
20
P
W
L
Package
SOT89
SOT908
SOT89
SOT908
SOT89
SOT908
RF (plasma) bulb
26.5
27.5
27.2
G
dB
24
24
18
17
16
19
p
brb436
Mode of operation
1-TONE; 2-TONE; CW
1-TONE; 2-TONE; CW
1-TONE; 2-TONE; CW
1-TONE; PULSED RF
1-TONE; CW
2-TONE
CW
class AB
class B
Type
BGA6289
BGA6489
BGA6589
BGA7124
BGA7024
BGA7127
BGA7027
BGA7130*
BGA7133*
Features
`
`
`
`
`
Highest power device
Unprecedented ruggedness
Low-thermal resistance design for very reliable operation
Very consistent device performance
Broadband device for flexible use
NXP Semiconductors RF Manual 14
th
edition
37