BLF6G10LS-135R,112 NXP Semiconductors, BLF6G10LS-135R,112 Datasheet - Page 65

• Manufacturer Part Number: BLF6G10LS-135R,112
• Description: IC BASESTATION FINAL SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10LS-135R,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 871.5MHz
• Gain: 21dB
• Voltage - Rated: 65V
• Current Rating: 32A
• Current - Test: 950mA
• Voltage - Test: 28V
• Power - Output: 26.5W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 32 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 26.5W(Typ)
• Power Gain (typ)@vds: 21@28VdB
• Frequency (min): 869MHz
• Frequency (max): 894MHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 13S
• Drain Source Resistance (max): 100(Typ)@6.15Vmohm
• Reverse Capacitance (typ): 2@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 28%
• Mounting: Surface Mount
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934061247112; BLF6G10LS-135R; BLF6G10LS-135R

3.2.3 Band-switch diodes
Why choose NXP Semiconductors’ bandswitch diodes:
` Reliable volume supplier
` Short leadtimes
` Low series Inductance
` Low Insertion loss
` Low capacitance
` High reverse Isolation
Bold = Highly recommended product
3.2.4 Schottky diodes
Why choose NXP Semiconductors’ schottky diodes
` (Very) low diode capacitance
` (Very) low forward voltage
` Single and triple-isolated diode
` (Ultra / very) small package
Applications
` Digital applications:
` RF applications:
Low-capacitance Schottky diodes
^ Diodes have matched capacitance
Type
BAT17
PMBD353
PMBD354^
1PS76SB17
1PS66SB17
1PS79SB17
1PS88SB82
1PS70SB82
1PS70SB84
1PS70SB85
1PS70SB86
1PS66SB82
1PS10SB82
Type
BA277
BA591
BA891
BAT18
NEW : Schottky diode selection guide on www.nxp.com/rfschottkydiodes
- ultra high-speed switching
- clamping circuits
- diode ring mixer
- RF detector
- RF voltage doubler
Easy-to-use parametric filters help you to choose the right schottky
diode for your design.
Package
SOD523
SOD323
SOD523
SOT23
Package
SOT23
SOT23
SOT23
SOD323
SOT666
SOD523
SOT363
SOT323
SOT323
SOT323
SOT323
SOT666
SOD882
V
Configuration
triple isolated
triple isolated
triple isolated
R
dual series
dual series
dual series
(V)
35
35
35
35
max
dual c.a.
dual c.c
single
single
single
single
single
IF max
(mA)
100
100
100
100
V
R
(V)
max.
15
15
15
15
15
15
15
4
4
4
4
4
4
r
D
(Ω)
0.7
0.7
0.7
0.7
max
@ IF =
(mA)
2
3
3
5
I
F
(mA)
max.
30
30
30
30
30
30
30
30
30
30
30
30
30
(MHz)
@ f =
100
100
100
200
450 @ IF = 1 mA
450 @ IF = 1 mA
450 @ IF = 1 mA
450 @ IF = 1 mA
450 @ IF = 1 mA
450 @ IF = 1 mA
340 @ IF = 1 mA
340 @ IF = 1 mA
340 @ IF = 1 mA
340 @ IF = 1 mA
340 @ IF = 1 mA
340 @ IF = 1 mA
340 @ IF = 1 mA
V
F
(mV)
max.
C
d
(pF)
1.2
0.9
0.9
max
1
@ V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
NXP Semiconductors RF Manual 14
(V)
20
C
6
3
3
R
D
(pF)
=
max.
(MHz)
@ f =
1
1
1
1
th
edition
67