BLF6G10LS-135R,112 NXP Semiconductors, BLF6G10LS-135R,112 Datasheet - Page 62

• Manufacturer Part Number: BLF6G10LS-135R,112
• Description: IC BASESTATION FINAL SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10LS-135R,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 871.5MHz
• Gain: 21dB
• Voltage - Rated: 65V
• Current Rating: 32A
• Current - Test: 950mA
• Voltage - Test: 28V
• Power - Output: 26.5W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 32 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 26.5W(Typ)
• Power Gain (typ)@vds: 21@28VdB
• Frequency (min): 869MHz
• Frequency (max): 894MHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 13S
• Drain Source Resistance (max): 100(Typ)@6.15Vmohm
• Reverse Capacitance (typ): 2@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 28%
• Mounting: Surface Mount
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934061247112; BLF6G10LS-135R; BLF6G10LS-135R

RF
N-channel, dual-gate MOSFETs for switching
6
Product
With external bias
BF998
BF998R
BF998WR
Fully internal bias
BF1105
BF1105R
BF1105WR
Partly internal bias
BF904(A)
BF904(A)R
BF904(A)WR
BF909(A)
BF909(A)R
BF909(A)WR
BF1102(R)
BF1201
BF1201R
BF1201WR
BF1202
BF1202R
BF1202WR
Package
SOT143
SOT143R
SOT343R
SOT143
SOT143R
SOT343R
SOT143
SOT143R
SOT343R
SOT143
SOT143R
SOT343R
SOT343
SOT143
SOT143R
SOT343R
SOT143
SOT143R
SOT343R
V
(V)
12
12
12
10
10
10
10
10
10
7
7
7
7
7
7
7
7
7
7
DS
(mA)
30
30
30
30
30
30
30
30
30
40
40
40
40
30
30
30
30
30
30
I
D
Min
12
12
12
12
11
11
11
2
2
2
8
8
8
8
8
8
8
8
8
(mA)
I
DSS
Max
18
18
18
16
16
16
13
13
13
20
20
20
20
19
19
19
16
16
16
Min
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
V
(p)GS
(V)
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
Max
-2.0
-2.0
-2.5
1
1
1
1
1
1
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
Min
21
21
22
25
25
25
22
22
22
36
36
36
36
23
23
23
25
25
25
Characteristics
(mS)
|Yfs|
Max
30
30
30
50
50
50
35
35
35
40
40
40
2.2
2.2
2.2
2.8
(pF)
Cis
Typ
2.1
2.1
2.1
2.2
2.2
2.2
3.6
3.6
3.6
2.6
2.6
2.6
1.7
1.7
1.7
(3)
(3)
(3)
(3)
1.2
1.2
1.2
1.6
1.05
1.05
1.05
0.85
0.85
0.85
Cos
(pF)
Typ
1.3
1.3
1.3
2.3
2.3
2.3
0.9
0.9
0.9
(2)
(2)
(2)
(2)
F @ 800
MHz
Typ
1.7
1.7
1.7
1.9
1.9
1.9
1.1
1.1
1.1
1
1
1
2
2
2
2
2
2
2
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