BLF6G10LS-135R,112 NXP Semiconductors, BLF6G10LS-135R,112 Datasheet - Page 84

• Manufacturer Part Number: BLF6G10LS-135R,112
• Description: IC BASESTATION FINAL SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10LS-135R,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 871.5MHz
• Gain: 21dB
• Voltage - Rated: 65V
• Current Rating: 32A
• Current - Test: 950mA
• Voltage - Test: 28V
• Power - Output: 26.5W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 32 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 26.5W(Typ)
• Power Gain (typ)@vds: 21@28VdB
• Frequency (min): 869MHz
• Frequency (max): 894MHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 13S
• Drain Source Resistance (max): 100(Typ)@6.15Vmohm
• Reverse Capacitance (typ): 2@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 28%
• Mounting: Surface Mount
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934061247112; BLF6G10LS-135R; BLF6G10LS-135R

Small-signal discretes
Double low V
(1)
(2)
BISS loadswitches
(2)
4
V
(V)
V
(V)
15
15
15
15
40
40
40
40
Device mounted on a PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
Device mounted on a PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
Device mounted on a FR4 PCB, single-sided copper, tin-plated and standard footprint
CEO
15
15
15
15
40
40
60
60
60
50
50
50
CEO
I
(A)
C
0.5
0.5
0.5
0.5
1.0
2.0
1.0
1.0
1.0
2.5
2.5
2.5
I
(A)
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
C
CEsat
Polarity
2 x PNP
NPN/PNP
2 x NPN
NPN/PNP
NPN/PNP
NPN/PNP
2 x NPN
2 x PNP
NPN/PNP
2 x NPN
2 x PNP
NPN/PNP
(BISS) transistors
Type
PBLS1501V
PBLS1502V
PBLS1503V
PBLS1504V
PBLS4001V
PBLS4002V
PBLS4003V
PBLS4004V
Type
PBSS3515VS
PBSS2515VPN
PBSS2515VS
PBSS2515YPN
PBSS4140DPN
PBSS4240DPN
PBSS4160DS
PBSS5160DS
PBSS4160DPN
PBSS4350SS
PBSS5350SS
PBSS4350SPN
R1, R2
(kΩ)
2.2
4.7
10
22
2.2
4.7
10
22
h
(min/typ)
200/ -
200/ -
200/ -
200/ -
300/ -
300/ -
250/500
200/350
250/500
200/350
FE
0.01
0.01
0.01
0.01
0.001
0.001
0.001
0.001
0.001
@ I
C
(A)
R
@ I
300
300
300
300
440
440
440
440
CEsat
C
@ V
(V)
2
2
2
2
5
5
5
5
5
typ (mΩ)
CE
V
I
< 150
< 150
< 150
<150
130
80
115
120
115
@ I
B
CEsat
= 0.025 A
(3)
C
(3)
/100
(3)
(3)
(3)
= 0.5 A;
/120
typ (mV)
V
@ I
150
150
150
150
220
220
220
220
CEsat
TBD
TBD
TBD
(3)
C
2
2
(3)
= 0.5 A
typ (mV)
(3)
@ I
V
max (mV)
< 250
< 250
< 250
< 250
< 500
< 400/530
< 250
< 330
< 250/330
CEsat
C
= 0.5 A; I
V
@ I
250
250
250
250
350
350
350
350
CEsat
C
B
0.5
0.5
0.5
0.5
1
2
1
1
1
max (mV)
= 0.05 A
@ I
C
(A)
0.05
0.05
0.05
0.05
0.1
0.2
0.1
0.1
0.1
@ I
Package
SOT666
SOT666
SOT666
SOT666
SOT666
SOT666
SOT666
SOT666
B
(A)
Package
SOT666
SOT666
SOT666
SOT363 (SC-88)
SOT457 (SC-74)
SOT457 (SC-74)
SOT457 (SC-74)
SOT457 (SC-74)
SOT457 (SC-74)
SO8
SO8
SO8
Size (mm)
1.6 x 1.2 x 0.55
1.6 x 1.2 x 0.55
1.6 x 1.2 x 0.55
1.6 x 1.2 x 0.55
1.6 x 1.2 x 0.55
1.6 x 1.2 x 0.55
1.6 x 1.2 x 0.55
1.6 x 1.2 x 0.55
Size (mm)
1.6 x 1.2 x 0.55
1.6 x 1.2 x 0.55
1.6 x 1.2 x 0.55
2.0 x 1.25 x 0.95
2.9 x 1.5 x 1.0
2.9 x 1.5 x 1.0
2.9 x 1.5 x 1.0
2.9 x 1.5 x 1.0
2.9 x 1.5 x 1.0
4.9 x 3.9 x 1.75
4.9 x 3.9 x 1.75
4.9 x 3.9 x 1.75
P
(mW)
300
300
300
300
300
300
300
300
Continued next page
tot
(2)
(2)
(2)
(2)
(2)
(2)
(2)
(2)
P
500
500
500
430
750
750
750
750
750
TBD
TBD
TBD
tot
(mW)
(1)
(1)
(1)
(1)
(2)
(2)
(2)
(2)
(2)